Tunable and stable micro-ring resonator based on thin-film lithium tantalate

Jiayang Yu,Ziliang Ruan,Yu Xue,Haohua Wang,Ranfeng Gan,Tian Gao,Changjian Guo,Kaixuan Chen,Xin Ou,Liu Liu
DOI: https://doi.org/10.1063/5.0187996
IF: 5.6
2024-03-01
APL Photonics
Abstract:As ferroelectric materials, lithium tantalate and lithium niobate share similar material characteristics, such as a high Pockels effect and nonlinear optical coefficients. When compared to lithium niobate, lithium tantalate offers a higher optical damage threshold, a broader transparent window, and lower birefringence, making it a promising candidate for high-performance electro-optical photonic integrated devices. In this study, we design and successfully fabricate micro-ring resonators on an acoustic-grade lithium-tantalate-on-insulator wafer, demonstrating their tunability and dynamic modulation capabilities. Experimental results indicate that the achieved thin-film lithium tantalate based micro-ring resonator exhibits an intrinsic Q-factor of 8.4 × 105, corresponding to a waveguide propagation loss of 0.47 dB/cm and a tuning efficiency of 1.94 pm/V. More importantly, as compared to those based on thin-film lithium niobate, a much weaker photorefractive effect and drift phenomenon around the 1550 nm wavelength under a direct-current drive are observed in the present fabricated thin-film lithium tantalate micro-rings with a silicon oxide over-cladding and a tuning electrode on top.
optics,physics, applied
What problem does this paper attempt to address?
This paper aims to solve the problems of tuning stability and dynamic modulation ability of microring resonators in high - performance optoelectronic integrated devices. Specifically, the research team designed and successfully fabricated a microring resonator based on thin - film lithium tantalate (LiTaO₃, LT) to demonstrate its tuning ability and dynamic modulation performance. The paper mainly focuses on the following aspects: 1. **Tuning efficiency**: The research team experimentally verified the tuning efficiency of the fabricated thin - film LT microring resonator, which reached 1.94 pm/V. This result is consistent with theoretical calculations and is similar to that of the microring resonator based on thin - film lithium niobate (LiNbO₃, LN), because they have similar electro - optic coefficients \( r_{33} \). 2. **Low loss and high Q - factor**: The experimental results show that the intrinsic Q - factor of the fabricated thin - film LT microring resonator reaches \( 8.4\times10^5 \), and the corresponding waveguide propagation loss is 0.47 dB/cm. These performance indicators indicate that the thin - film LT microring resonator has high potential in optical filtering and signal processing applications. 3. **Weak photorefractive effect and low DC drift**: Compared with the microring resonator based on thin - film LN, the thin - film LT microring resonator exhibits a weaker photorefractive effect and low DC drift phenomenon at a wavelength of 1550 nm. This makes the thin - film LT microring resonator have a significant advantage in high - stability optoelectronic integrated devices. 4. **Dynamic modulation performance**: The research team also evaluated the dynamic modulation performance of the thin - film LT microring resonator and found that at different frequencies (0.5 Hz, 100 Hz, 10 kHz), the changes in optical output were basically the same, showing a flat low - frequency electro - optic response and low DC drift. 5. **Thermo - optic effect**: By increasing the input power, the research team observed that at high - power input (7 dBm), the resonance peak showed a slight red shift and an asymmetric shape, which was caused by the thermo - optic effect. This phenomenon further confirms that the traditional self - heating effect is dominant at high input power. In summary, this paper demonstrates the superior performance of the thin - film LT - based microring resonator in terms of tuning stability, dynamic modulation performance, and low photorefractive effect by designing and fabricating it, providing new possibilities for the development of high - performance optoelectronic integrated devices.