Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors
Guibao Wang,Bo Peng,Lei Yuan,Yuming Zhang,Renxu Jia
DOI: https://doi.org/10.1109/ted.2024.3405473
IF: 3.1
2024-06-21
IEEE Transactions on Electron Devices
Abstract:This article offers an analysis that includes both experimental and theoretical dimensions of silicon carbide (SiC)/SiO2 metal-oxide-semiconductor (MOS) capacitors. The study integrates first-principles calculations to clarify the physical failure mechanism associated with time-dependent dielectric breakdown (TDDB). Initially, by electrical characterizations of J– curves and TDDB in the two different devices, elucidating the associated physical mechanisms underlying gate reliability issues at diverse gate voltage ( ) and temperatures, which was found that elevated temperature induces a reduction in the potential barrier height, resulting in a higher tunneling current. Furthermore, to reveal the failure mechanisms of TDDB, first principles were used. It is concluded that: 1) under constant voltage, with the extension of time, the SiO2 layer will capture more electrons, and, when it reaches a certain degree, a conductive path will be formed in the gate oxygen, causing breakdown and 2) as the gate voltage increases, the electron capture rate will significantly increase, leading to a rapid reduction of the breakdown time of the SiO2 gate oxide layer.
engineering, electrical & electronic,physics, applied