Abstract:Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric properties of strained bulk and thin film Bi2Se3 and Bi2Te3, focusing on an appropriate description of van der Waals interactions. The calculations show that the van der Waals Density functional with Cooper's exchange can reproduce closely the experimental interlayer distances in unstrained Bi2Se3 and Bi2Te3. Interestingly, we predict atomic structures that are in much better agreement with the experimentally determined structure from Nakajima than that obtained from Wyckoff, especially for Bi2Se3 where the difference in atomic structures qualitatively changes the electronic band structure. The band structure obtained using the Nakajima structure, and the theoretically optimized structure, are in much better agreement with previous reports of photoemission measurements, than that obtained using the Wyckoff structure. Fully optimizing atomic structures of bulk and thin film Bi2Se3 and Bi2Te3 under different in-plane and uniaxial strains, we predict that the electronic band gap of both the bulk materials and thin films decreases with tensile in-plane strain and increases with compressive in-plane strain. We also predict, using the semiclassical Boltzmann approach, that the magnitude of the n-type Seebeck coefficient of Bi2Te3 can be increased by the compressive in-plane strain, while that of Bi2Se3 can be increased with tensile in-plane strain. Further, the in-plane power factor of n-doped Bi2Se3 can be increased with compressive uniaxial strain, while that of n-doped Bi2Te3 can be increased by compressive in-plane strain. ...

Strain control of the competition between metallic and semiconducting states in single-layers of TaSe$_3$

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Structural, electronic and thermoelectric properties of monolayer TiSe2

Strain-controlled switch between ferromagnetism and antiferromagnetism in 1T-CrX2 (X = Se, Te) monolayers

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Strain engineering and lattice vibration manipulation of atomically thin TaS2 films

Manipulation of the Magnetoresistance by Strain in Topological TaSe3

Exploring control of the emergent exciton insulator state in 1T-TiSe$_2$ monolayer by state-of-the-art theory models

Theory of strain in single-layer transition metal dichalcogenides

Strain modulation of intrinsic spin hall conductivity in monolayer 1 T TaS 2 and Graphene/TaS 2 interface: The role of orbital texture

First Principles Investigations of the Atomic, Electronic, and Thermoelectric Properties of Equilibrium and Strained Bi2Se3 & Bi2Te3, with van der Waals Interactions

The rich structural, electronic and bonding landscape of 1$T$-type TaTe$_2$ single-layers

Electronic Structure and Superconductivity of Single-Layer FeSe on Nb:SrTiO 3 /laalo 3 with Varied Tensile Strain

Reconciling the bulk metallic and surface insulating state in 1 T − TaSe 2

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Mechanics and strain engineering of bulk and monolayer Bi2O2Se

Thickness- and strain-tunable electronic structures of two-dimensional Bi2O2Se

Strain-Enabled Control of Chiral Magnetic Structures in MnSeTe Monolayer

Strain effects on the electronic structure of the FeSe0.5Te0.5 superconductor

Strain Controls Charge Carrier Lifetimes in Monolayer WSe2: Ab Initio Time Domain Analysis

Structure, strain, and control of ground state property in LaTiO$_3$/LaAlO$_3$ superlattice