Abstract:Transition metal dichalcogenides are lamellar materials which can exhibit unique and remarkable electronic behavior due to effects of electron-electron and electron-phonon coupling. Among these materials, 1T-tantalum disulfide (1T-TaS2) has spurred considerable interest, due to its multiple first order phase transitions between different charge density wave (CDW) states. In general, the basic effects of charge density wave formation in 1T-TaS2 can be attributed to in plane re-orientation of Ta-atoms during the phase transitions. Only in recent years, an increasing number of studies has also emphasized the role of interlayer interaction and stacking order as a crucial aspect to understand the specific electronic behavior of 1T-TaS2, especially for technological systems with a finite number of layers. Obviously, continuously monitoring the out of plane expansion of the sample can provide direct inside into the rearrangement of the layer structure during the phase transition. In this letter, we therefore investigate the c-axis lattice discontinuities of 1T-TaS2 by atomic force microscopy (AFM) method under ultra-high vacuum conditions. We find that the c-axis lattice experiences a sudden contraction across the nearly-commensurate CDW (NC-CDW) phase to commensurate CDW (C-CDW) phase transition during cooling, while an expansion is found during the transition from the C-CDW phase to a triclinic CDW phase during heating. Thereby our measurements reveal, how higher order C-CDW phase can favor a more dense stacking. Additionally, our measurements also show subtler effects like e.g. two expansion peaks at the start of the transitions, which can provide further insight into the mechanisms at the onset of CDW phase transitions.

The rich structural, electronic and bonding landscape of 1$T$-type TaTe$_2$ single-layers

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Metastable polymorphic phases in monolayer TaTe2

Dominant Charge Density Order in TaTe4

Electronic Landscape of Group-5 Transition Metal Ditellurides $M$Te$_2$ ($M$ = V, Nb, Ta): Multiple Crystal Phases with Local Bonds and Flat Bands

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS2

Discovery of an Unconventional Charge Modulation on the Surface of Charge-Density-wave Material TaTe4

Two-dimensional charge density wave TaX$_2$ (X=S, Se, Te) from first principles

Coupling of Charge, Lattice, Orbital, and Spin Degrees of Freedom in Charge Density Waves in 1T-Tas2

Lattice Discontinuities of 1T-TaS2 across First Order Charge Density Wave Phase Transitions

Electronic structures and Mott state of epitaxial TaS2 monolayers

Multiple Charge density waves and lattice superstructures in thin-layer TmTe2 and TmTe3

Two-dimensional Charge Density Waves in TaX2 ( X=S , Se, Te) from First Principles

Nature of metallic and insulating domains in the CDW system 1T-TaSe2

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

Exploring the Charge Density Wave phase of 1$T$-TaSe$_2$: Mott or Charge-transfer Gap?

Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound

Origin of the Structural Phase Transition in Single-Crystal TaTe2

Multiple Charge density waves and structural superlattices in TmTe2 and TmTe3 few layer