Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are new crystalline materials with exotic electronic, mechanical, and optical properties. Due to their inherent exceptional mechanical strength, these 2D materials provide us the best platform for strain engineering. In this study, we have performed first-principles calculations to study the effect of uniaxial strains on the electronic, magnetic, and mechanical properties of transition-metal dichalcogenides (TMDs) MX2 (where M = Cr, Mo, W and X = S, Se), monolayers (2D), and armchair and zigzag nanoribbons (1D). For the mechanical strength, we determined the tensile strength (σ) and Young's modulus (Y) and observed that σ and Y are higher in monolayers (most in WS2ML) as compared to nanoribbons where monolayers resist tension up to 25-28% strain while nanoribbons (armchair and zigzag) can be only up to 5-10%. Deformation potential (Δ p ) in the linear regime near the equilibrium position(ϵ < 2%) has also been calculated, and its effect on monolayers is observed less as compared to nanoribbons. In addition, unstrained nonmagnetic monolayers are direct band gap semiconductors (D) which changed to indirect band gap semiconductors (I) with the application of strain. Ferromagnetic states of metallic zigzag nanoribbons (including up spin channel of 7-CrS2NR and 7-CrSe2NR) are greatly affected by strain and show half-metal-like behavior in different strain range. The magnetic moment (μ) that is predominantly observed in zigzag nanoribbons is 2 times higher than that of other nanoribbons. This magnetism in nanoribbons is mostly caused by transition-metal atoms (M = Cr, Mo, W). Thus, our study suggests that strain engineering is the best approach to modify or control the structural, electronic, magnetic, and mechanical properties of the TMD monolayer and nanoribbons which, therefore, open their potential applications in spintronics, photovoltaic cells, and tunneling field-effect transistors.

Manipulation of the Magnetoresistance by Strain in Topological TaSe3

Strain-tunable Magnetism at Oxide Domain Walls

Magnetism of Ta Dichalcogenide Monolayers Tuned by Strain and Hydrogenation

Strain engineering and lattice vibration manipulation of atomically thin TaS2 films

Strain Induced Novel Quantum Magnetotransport Properties of Topological Insulators

Strain-Controllable Phase and Magnetism Transitions in Re-Doped MoTe2 Monolayer

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Electronic Band Gap Tuning and Calculations of Mechanical Strength and Deformation Potential by Applying Uniaxial Strain on MX2 (M = Cr, Mo, W and X = S, Se) Monolayers and Nanoribbons

Strain-tuned topological phase transition and unconventional Zeeman effect in ZrTe5 microcrystals

Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$

Large Magnetoresistance in Topological Insulator Candidate TaSe3

Strain control of the competition between metallic and semiconducting states in single-layers of TaSe$_3$

Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2

Magnetic properties manipulation of CrTe 2 bilayer through strain and self-intercalation

Strain-sensitive ferromagnetic two-dimensional Cr2Te3

The Relationship Between Anisotropic Magnetoresistance and Topology of Fermi Surface in Td-MoTe2 Crystal

Large magnetoresistance and nontrivial Fermi surface topology in quasi-one-dimensional Ta2PdSe6

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering

Structurally induced magnetic transitions in layered dichalcogenides MoQ2 (Q = S, Se, Te) and double hydroxides (M2+)6Al3(OH)18[Na(H2O)6](SO4)2 6H2O (M2+ = Mn2+, Fe2+) under mechanical deformation

Quadratic to linear magnetoresistance tuning in TmB4

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators