Abstract:The effects of strain and hydrogenation on the electronic and magnetic properties of monolayers of Ta based dichalcogenides (TaX2; X = S, Se, Te) are investigated using density-functional theo-ry. We predict a complex scenario of strain-dependent magnetic phase transitions involving par-amagnetic, ferromagnetic, and modulated antiferromagnetic states. Covering one of the two chalcogenide surfaces with hydrogen switches the antiferromagnetic/nonmagnetic TaX2 mono-layers to a semiconductor. Our research opens new pathways towards the manipulation of mag-netic properties for future optoelectronics and spintronics applications.

What problem does this paper attempt to address?

This paper aims to explore the effects of strain and hydrogenation on the electronic and magnetic properties of tantalum - based dichalcogenide (TaX₂, where X = S, Se, Te) monolayer materials. Through density - functional - theory (DFT) calculations, the authors predict the complex magnetic - phase - transition processes of these materials under different strain conditions, involving transitions among paramagnetic, ferromagnetic, and modulated antiferromagnetic states. In addition, the study also finds that after covering hydrogen atoms on one of the chalcogen surfaces, the original antiferromagnetic or non - magnetic TaX₂ monolayer materials will be transformed into semiconductors. This research opens up new avenues for manipulating the magnetic properties of materials in future optoelectronics and spintronics applications. Specifically, the paper addresses the following key issues: 1. **Effect of strain on magnetic properties**: By applying different strains, the authors observe that TaTe₂ remains in an antiferromagnetic state below 2% strain and transforms into a ferromagnetic state after exceeding 2%. TaS₂ and TaSe₂ remain in a paramagnetic state below 6% strain and transform into a ferromagnetic state after exceeding 6%. 2. **Effect of hydrogenation on the electronic structure**: Hydrogenation treatment transforms the TaX₂ monolayer materials from a metallic or semimetallic state to a semiconductor state, and the hydrogenated materials have direct or indirect band gaps. 3. **Origin of magnetic properties**: By analyzing the spin - polarized density of states (DOS) of Ta 5d states, the authors find that the magnetic moment mainly originates from the 5d states of Ta atoms, and these states lose spin degeneracy near the Fermi level due to strain. These research results not only reveal the regulation mechanisms of strain and hydrogenation on the magnetic properties of TaX₂ monolayer materials but also provide a theoretical basis for the development of new nano - electronic materials.

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