Near-infrared and mid-infrared light emission of boron-doped crystalline silicon

Xiaoming Wang,Jiajing He,Yaping Dan

DOI: https://doi.org/10.1364/oe.516405

IF: 3.8

2024-03-13

Optics Express

Abstract:Xiaoming Wang, Jiajing He, Yaping Dan The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with ... [Opt. Express 32, 10941-10947 (2024)]

optics

What problem does this paper attempt to address?

Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon

Xiaoming Wang,Jiajing He,Yaping Dan

2024-01-18

Abstract:The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an enticing strategy to transform highly inefficient silicon into a luminescent material. However, the emission at telecommunication wavelength suffers from the strong thermal quenching effect, resulting in low efficiency at room temperature. Here, we applied a new deep cooling process to address this issue. Interestingly, we find that electrons and holes recombine through defects emitting two photons, one in near infrared (NIR, 1.3~1.6 {\mu}m) and the other in mid-infrared band (MIR, around 3.5 {\mu}m). The PL intensity at NIR increases by three folds when the temperature increases from 77 K to 300K. Furthermore, the NIR light emission of reverse biased silicon diodes was significantly enhanced compared to forward bias, emitting the maximum output power of 42 nW at 60 mA. The results offer new opportunities for the development of IR light sources in integrated circuits.

Optics,Materials Science
Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Mid-infrared Integrated Photonics on Silicon: a Perspective

Hongtao Lin,Zhengqian Luo,Tian Gu,Lionel C. Kimerling,Kazumi Wada,Anu Agarwal,Juejun Hu

DOI: https://doi.org/10.1515/nanoph-2017-0085

IF: 7.5

2018-01-01

Nanophotonics

Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
Research Progress of Silicon Light Source

Shen Hao,Li Dong-Sheng,Yang De-Ren

DOI: https://doi.org/10.7498/aps.64.204208

2015-01-01

Abstract:To meet the requirements for high speed, low cost, and more information capacity, silicon photonics has been booming in recent years. Silicon photonics covers a very wide field. For the silicon photonics, researchers have successfully achieved silicon-based optical waveguides, switches, modulators, and detectors. But the problem of silicon based light source has not been really resolved, which has become a primary bottleneck for further developing the silicon photonics. The momentum of a phonon is required to allow an electron to transit from the minimum of the conduction band to the maximum of the valence band in Si because of the indirect bandgap. This two-particle process with a low probability makes it difficult to achieve high-efficiency silicon-based light source by itself. However, much effort has been made to characterize and understand the light-emission phenomena of silicon-based devices. Also, more attempts were made to enhance the emission efficiency of silicon. Practical silicon lasers are very important for silicon photonics and have been a long goal for semiconductor scientists. A number of important breakthroughs in the past decade have focused on silicon as a photonic platform thanks to the efforts of scientists. In this review, we introduce the recent progress of silicon-based luminescence materials, silicon light emitting diodes and silicon lasers. In the first part of this paper, common types of silicon-based light emitting materials, including porous silicon, silicon nanocrystals, rare earth-doped silicon, silicon defect emission, germanium on silicon and semiconducting silicides are comprehensively reviewed. Among them, the quantum effects and surface effects of low-dimensional silicon can greatly enhance the light emission efficiency. The erbium atoms in silicon-based rare earth materials can produce the light emission at communication wavelength band independently of the host. The transition from the lowest excited state to the 4f ground state yields light at 1.54 m. Moreover the emission energy is independent of the temperature due to the inner atomic transition. Group IV materials grown on silicon such as Ge and GeSn alloy can change from indirect bandgap into direct bandgap by introducing mechanically strain and modifying the component. Strong enhancement of photoluminescence and net gain emerging from the direct transition are very significant for fabricating the devices. In the second part, different light emitting diodes (LEDs) fabricated with above luminescent materials are introduced. The Si PN diodes were once popular at the earlier research stage. One approach was to modify the effective surface on high-purity single crystal silicon and the other idea was to use optically active defects in silicon. Ten years later, silicon LEDs in which the dressed-photon-phonons assisted method is used, made the Si PN diode rejuvenated. LEDs fabricated on nano-structured Si and silicon-based film were limited in the optoelectronic integration since the luminescence wavelength is not corresponding to the low-loss communication region. Although erbium-doped and Er silicate LEDs emit suitable light, their high turn-on voltage and low luminescence efficiency block the practical application. The researches of Ge-on-Si LED mainly focus on modifying the band structure by introducing strain and n-doping. In the third part, firstly we summarize the basic rules of the silicon laser. Then, we review the most recent progress in the field. Nanometer Si with periodic array can only behave unambiguous laser action using optical pumping and at very low temperature. Low threshold silicon Raman lasers with racetrack ring resonator cavities can only stop on paper also due to the difficulty in electrical pumping. The Ge-on-Si lasers operating at room temperature by optical and electrical pumping were accomplished in the past 5 years. The GeSn laser that is CMOS-compatible also came into being this year. Although so far, lasing has been implemented only by using pulsed optical pumping and stopped working at 90 K, this first demonstration of lasing in a direct-gap group IV alloy grown on standard silicon substrates is potentially an important step on the way to a platform of fully integrated silicon-based photonics. Hybrid III-V-on-Si lasers are considered as one of the most practical means due to the excellent photoelectric properties and mature preparation technology. Finally, current problems and future development direction in the silicon light source are also presented briefly.
Optically Pumped Mid-Infrared Light Emitter on Silicon

L. A. Elizondo,Y. Li,A. Sow,R. Kamana,H. Z. Wu,S. Mukherjee,F. Zhao,Z. Shi,P. J. McCann

DOI: https://doi.org/10.1063/1.2729467

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Characterization of a IV-VI semiconductor structure consisting of a PbSe/PbSrSe multiple quantum well (MQW) active region between distributed Bragg reflectors grown by molecular beam epitaxy on a Si(111) substrate is described. Pulsed photoluminescence (PL) spectra exhibited interband electronic transition energies ranging linearly with temperature from 231.4 meV at 150 K to 299.4 meV at 300 K, while continuous wave (cw) PL spectra exhibited only the vertical optical cavity mode with emission varying between 299.2 meV at 150 K to 301.1 meV at 300 K. A maximum PL emission power of approximately 1.8 mW was obtained for cw diode laser pumping when the heat sink temperature was 200 K. Data are consistent with a localized epilayer heating effect of about 100 deg where the interband electronic transition energy is coincident with the vertical optical cavity mode. In spite of significant sample heating and associated thermal expansion mismatch stress, cw PL emission intensity was stable with no noticeable degradation in intensity after repeated measurements. These results show that IV-VI epitaxial layers on silicon are viable materials for fabricating reliable light emitters for on-chip optical interconnects.
Recent Progress of Silicon Photonics for Middle-Infrared Application

Shu Haowen,Su Zhaotang,Wang Xingjun,Zhou Zhiping

DOI: https://doi.org/10.11959/j.issn.1000-0801.2015274

2015-01-01

Abstract:“Capacity Crunch”in NIR field needs to be forestalled since the pressure of information transmission，processing and storage is continually growing.Silicon photonics，with compatibility of CMOS，compact structure and low fabrication cost，shows its superiority in the field of mid-IR transmission and signal processing.Thus a lead forward is excepted to be realized in large-scale integration of mid-IR devices and nonlinear optical and other field.The strengths and challenge of silicon photonics in mid-IR application were estimated firstly.Then some“building block”components of silicon photonics in mid-IR（waveguides，beam splitter/combiner，diode，etc）were introduced.Achievements of devices （nonlinear optical devices based on FWM，frequency comb in sensing field and laser，modulator，detector in communication field）within the last five years were presented.Finally，the conclusion was made for recent research progress.
Single-atom Infrared Emission in Doped Silicon Nanocrystals.

Feilong Wang,Qiongrong Ou,Shuyu Zhang

DOI: https://doi.org/10.1039/d3cp03698g

2023-01-01

Abstract:Silicon luminescence, due to silicon being abundant, non-toxic and harmless, is a topic of pivotal importance in optoelectronics and biological imaging. However, a major challenge in developing high-efficiency silicon light sources is the relatively weak allowable transitions. This study focuses on single atom-doped silicon nanocrystals (Si NCs) and theoretically investigates the emission behavior of single atoms within a tetrahedral coordination field. Doping a single atom in Si NCs can result in a ∼102 times improvement at least in the squared transition dipole moment (TDM2), and induce a spectral shift towards near- and mid-infrared wavelengths. These findings offer a strong foundation for designing Si NCs for on-chip optical communication and single photon emitters.
Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

Benjamin T Diroll,Katelyn S Schramke,Peijun Guo,Uwe R Kortshagen,Richard D Schaller

DOI: https://doi.org/10.1021/acs.nanolett.7b03393

2017-10-11

Abstract:Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.
Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

Si Li,Yuhan Gao,Ruixin Fan,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.3389/fmats.2015.00008

2015-02-23

Frontiers in Materials

Abstract:Silicon pn-junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL) was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 μm (0.78 eV) was observed besides the band-to-band line (~1.1 eV) under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce that the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of the boron atoms into a silicon crystal lattice.

materials science, multidisciplinary
Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Zhenyi Ni,Xiaodong Pi,Shu Zhou,Tomohiro Nozaki,Bruno Grandidier,Deren Yang

DOI: https://doi.org/10.1002/adom.201670025

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:On page 700, size-dependent optical absorption of boron-hyperdoped silicon nanocrystals (NCs) is investigated by X. D. Pi, D. Yang, and co-workers. For small NC sizes, the quantum confinement effect and the dielectric constant of Si NCs can cause a blue shift of the infrared absorption. This blue shift is induced by the localized surface plasmon resonance (LSPR) of Si NCs. For extremely small NC sizes, the significant scattering of free carriers at the NC surface can completely damp the LSPR.
Near-band Edge Light Emission from Silicon Semiconductor on Insulator Diodes

J Zhao,G Zhang,T Trupke,A Wang,F Hudert,MA Green

DOI: https://doi.org/10.1063/1.1800286

IF: 4

2004-01-01

Applied Physics Letters

Abstract:Light-emitting diodes have been designed and fabricated on commercial crystalline silicon semiconductor on insulator wafers. Strong infrared light emission has been observed from these diodes under forward bias conditions with an external quantum efficiency of 2×10−6. The band edge phonon-assisted photoluminescence from the top single-crystalline silicon layer is responsible for such emission with a spectrum peaked at 1.135μm wavelength. Due to negligible reabsorption of spontaneously emitted photons within the extremely thin silicon layer, the short wavelength emission is significantly stronger in relative terms compared to emission from bulk-silicon light-emitting devices.
Silicon-based Optoelectronic Luminescent Materials and Devices

CAO JiaHao,LI DongSheng,PI XiaoDong,MA XiangYang,YANG DeRen

DOI: https://doi.org/10.1360/n092017-00005

2017-01-01

Abstract:Optical interconnection using photons as information carriers is one of the trends in silicon integrated circuits. However, the realization of silicon-based optical interconnection must be dependent of efficient silicon-based light sources that are compatible with current IC manufacturing processes. In this paper, our research results of silicon-based light sources in recent years are summarized with special emphasis on the latest progress in silicon-based luminescent materials and devices, including silicon quantum dots, silicon crystal defects, silicon-based nitrogen oxide films and silicon-based oxide semiconductor films.
Doping silicon nanocrystals with boron and phosphorus

Xiaodong Pi

DOI: https://doi.org/10.1155/2012/912903

IF: 3.791

2012-01-01

Journal of Nanomaterials

Abstract:The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for Band P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.
Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhenyi Ni,Xiaodong Pi,Shu Zhou,Tomohiro Nozaki,Bruno Grandidier,Deren Yang

DOI: https://doi.org/10.1002/adom.201500706

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:Hyperdoping silicon nanocrystals (Si NCs) is emerging as an effective means to obtain novel properties such as localized surface plasmon resonance (LSPR) from Si. Here it is shown that the physical properties and in particular the LSPR of boron (B)‐hyperdoped Si NCs significantly change as the NC size decreases from 6.8 to 2.4 nm. While the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones, they suffer much less from disorder and show LSPR over a wider range of B concentration. As a result, by taking advantage of the tunability of the NC size and doping level, the LSPR energy can be changed, making attractive the development of novel Si structures and devices based on B‐hyperdoped Si NCs.
Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Jie Wu,Yulei Huang,Tao Shang,Fangjie Wang,Guoliang Deng,Xiaolin Sui,Shouhuan Zhou

DOI: https://doi.org/10.2139/ssrn.4532539

IF: 3.754

2023-10-09

Optical Materials

Abstract:Silicon surface microstructures can significantly improve their reflection and absorption characteristics and are widely used in photovoltaics and optoelectronic detection. But there is little research on the infrared emission characteristics of microstructure silicon since silicon is an indirect bandgap material. Here, we fabricate surface microstructures on highly doped silicon by femtosecond laser scanning, enhancing its broadband infrared radiation significantly under electric driving. At 12 μm, it can be enhanced to 274% of the untreated silicon. Our results show that silicon with surface microstructures can be used as a wideband infrared emitter. This study provides a new method for realizing a broad-spectrum silicon-based electrical drive infrared light source.

materials science, multidisciplinary,optics
Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

Xuhan Guo,Xingchen Ji,Baicheng Yao,Teng Tan,Allen Chu,Ohad Westreich,Avik Dutt,Cheewei Wong,Yikai Su

DOI: https://doi.org/10.1515/nanoph-2022-0575

IF: 7.5

2023-01-18

Nanophotonics

Abstract:Silicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging applications which require coverage across the visible or mid infrared (mid-IR) wavelength bands. It is desirable to introduce other wideband materials through heterogeneous integration, while keeping the integration compatible with wafer-scale fabrication processes on silicon substrates. We discuss the properties of silicon-family materials including silicon, silicon nitride, and silica, and other non-group IV materials such as metal oxide, tantalum pentoxide, lithium niobate, aluminum nitride, gallium nitride, barium titanate, piezoelectric lead zirconate titanate, and 2D materials. Typical examples of devices using these materials on silicon platform are provided. We then introduce a general fabrication method and low-loss process treatment for photonic devices on the silicon platform. From an applications viewpoint, we focus on three new areas requiring integration: sensing, optical comb generation, and quantum information processing. Finally, we conclude with perspectives on how new materials and integration methods can address previously unattainable wavelength bands while maintaining the advantages of silicon, thus showing great potential for future widespread applications.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Extended infrared responses in Er/O-hyperdoped Si at room temperature

Kun Zhang,Jiajing He,Ting He,Qing Li,Meng Peng,Jiaxiang Guo,Tao Zhang,Xiaoming Wang,Huimin Wen,He Zhu,Ning Li,Peng Wang,Yaping Dan,Weida Hu

DOI: https://doi.org/10.1364/OL.441553

2021-10-15

Abstract:Silicon photonics has become the preferred candidate for technologies applicable to multifarious fields. However, the applications are strictly limited by the intrinsic in-band photo effect of silicon. Herein, near-infrared photodetectors that break through the silicon bandgap by Er/O hyperdoping are fabricated, potentially extending their applications into telecommunications, low-light-level night vision, medical treatment, and others. Er/O-hyperdoped silicon was achieved as an infrared light absorption layer through ion implantation. The lattice damage caused by ion implantation was repaired by a deep cooling process in which high-temperature samples were cooled by helium flushing cooled by liquid nitrogen. Traditional junction and metallization processes were performed to form a photodiode. We demonstrate that the device has a spectral range up to the wavelength of 1568 nm, a maximum responsivity of 165 µA/W at 1310 nm, and 3 dB cutoff bandwidth up to 3 kHz. Finally, temperature-dependent optical-electrical characteristics were measured to demonstrate the activation mechanism of Er/O in silicon. This Letter proves silicon's potential in realizing extended infrared detection at room temperature, and it provides a possible way to fabricate infrared optoelectronics and signal processing integrated chips on a CMOS (complementary metal-oxide-semiconductor) platform.
Near-infrared Light Emitting Devices from Er Doped Silica Thin Films Via Introducing SnO2 Nanocrystals

LiXiang Wang,YangYi Zhang,JiaMing Chen,EnZe Qu,JingJie Zhao,Dongke Li,Wei Li,Jun Xu,KunJi Chen

DOI: https://doi.org/10.1088/1402-4896/aca226

2022-01-01

Physica Scripta

Abstract:To get high performance light emitting devices on Si platform with emission wavelength at 1.55 mu m is a challenge for future Si-based opto-electronic integration chips. In this paper, we fabricated near-infrared light-emitting devices based on Er/SnO2 co-doped silica thin films. The introduction of SnO2 nanocrystals with controllable size and density not only contributes to the near-infrared light emission enhancement of Er3+ ions at 1.55 mu m, but also provides an effective carrier transport channel to realize efficient and stable electro-luminescence. The corresponding devices exhibit an external quantum efficiency of 5.4% at near infrared light region and the power efficiency is about 1.52 x 10(-3). Our present work lays a solid foundation for facilitating Si-based light source towards practical application in the field of optoelectronic interconnection.
Tetragonal Single-Crystalline Boron Nanowires with Strong Anisotropic Light Scattering Behaviors and Photocurrent Response in Visible-Light Regime.

Luxi Peng,Jinxiu Wen,Huanjun Chen,Zebo Zheng,Ningsheng Xu,Jun Chen,Shaozhi Deng,Fei Liu

DOI: https://doi.org/10.1002/smll.201704135

IF: 13.3

2018-01-01

Small

Abstract:Boron is a narrow-bandgap (1.56 eV) semiconductor with high melting-point, low-density, large Young's modulus and very high refractive index (3.03) close to silicon. Therefore, boron nanostructures is expected to possess strong visible-light scattering properties. However, photonic and optoelectronic properties of the boron nanostructures are seldom studied until now. In this paper, we have successfully prepared single-crystalline boron nanowire (BNW) arrays with high-density on Si substrate. All the BNWs are found to possess strong light-scattering behaviors in the visible regime. Most of all, the scattered light is found to polarize along the longitudinal direction of the nanowire. They also have excellent second-harmonic generation (SHG) properties under ultrafast laser irradiation. Further optoelectronic measurements show that an individual BNW device exhibits notable photocurrent responses in the visible-light range at ambient conditions, which can be attributed to the strong coupling effect between individual BNW and the visible light. The maximum photoresponsivity of an individual BNW can reach up to 12.12 A W-1 at a voltage of 10 V, and the response time is only 18 ms. Therefore, it unveils that the BNWs have a promising future in visible-light communications and detections.
Bright single photon sources in lateral silicon carbide light emitting diodes

Matthias Widmann,Matthias Niethammer,Takahiro Makino,Torsten Rendler,Stefan Lasse,Takeshi Ohshima,Jawad Ul Hassan,Nguyen Tien Son,Sang-Yun Lee,Jörg Wrachtrup

DOI: https://doi.org/10.1063/1.5032291

2020-07-04

Abstract:Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.

Applied Physics,Quantum Physics

Near-infrared and mid-infrared light emission of boron-doped crystalline silicon

Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Mid-infrared Integrated Photonics on Silicon: a Perspective

Research Progress of Silicon Light Source

Optically Pumped Mid-Infrared Light Emitter on Silicon

Recent Progress of Silicon Photonics for Middle-Infrared Application

Single-atom Infrared Emission in Doped Silicon Nanocrystals.

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

Room-Temperature Near-Infrared Electroluminescence from Boron-Diffused Silicon Pn-Junction Diodes

Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Near-band Edge Light Emission from Silicon Semiconductor on Insulator Diodes

Silicon-based Optoelectronic Luminescent Materials and Devices

Doping silicon nanocrystals with boron and phosphorus

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Femtosecond laser fabrication of silicon surface microstructures for enhanced infrared radiation under electric drive

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

Extended infrared responses in Er/O-hyperdoped Si at room temperature

Near-infrared Light Emitting Devices from Er Doped Silica Thin Films Via Introducing SnO2 Nanocrystals

Tetragonal Single-Crystalline Boron Nanowires with Strong Anisotropic Light Scattering Behaviors and Photocurrent Response in Visible-Light Regime.

Bright single photon sources in lateral silicon carbide light emitting diodes