Abstract:Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

Electron-Beam-Stimulated Formation of Luminescent Carbon Complexes in Hexagonal Boron Nitride

Controlled generation of luminescent centers in hexagonal boron nitride by irradiation engineering

X-ray Excited Optical Luminescence from Hexagonal Boron Nitride Nanotubes: Electronic Structures and the Role of Oxygen Impurities.

Defect-related photoluminescence of hexagonal boron nitride

Theory of phonon-assisted luminescence in solids: Application to hexagonal boron nitride

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals

Distinguishing different stackings in layered materials via luminescence spectroscopy

Electron Beam Restructuring of Quantum Emitters in Hexagonal Boron Nitride

Coupling of excitons and defect states in boron-nitride nanostructures

Luminescence Properties of the Hexagonal Boron Nitride Epilayer

Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

High-Resolution X-Ray Absorption Studies of Core Excitons in Hexagonal Boron Nitride

Cathodoluminescence imaging and spectroscopy on a single multiwall boron nitride nanotube

Luminescent defects in a few-layer h-BN film grown by molecular beam epitaxy

Dimensionality effects on the luminescence properties of hBN

Ultrafast phonon-mediated dephasing of color centers in hexagonal boron nitride probed by electron beams

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin