Abstract:In recent years, room-temperature ferroelectricity has been experimentally confirmed in a series of two-dimensional (2D) materials. Theoretically, for isolated ferroelectricity in even lower dimensions such as 1D or 0D, the switching barriers may still ensure the room-temperature robustness for ultrahigh-density non-volatile memories, which has yet been scarcely explored. Here, we show ab initio designs of 0D/1D ferroelectrics/multiferroics based on functionalized transition-metal molecular sandwich nanowires (SNWs) with intriguing properties. Some functional groups such as -COOH will spontaneously form into robust threefold helical hydrogen-bonded chains around SNWs with considerable polarizations. Two modes of ferroelectric switching are revealed: when the ends of SNWs are not hydrogen-bonded, the polarizations can be reversed via ligand reorientation that will reform the hydrogen-bonded chains and alter their helicity; when both ends are hydrogen-bonded, the polarizations can be reversed via proton transfer without changing the helicity of chains. The combination of those two modes makes the system the smallest proton conductor with a moderate migration barrier, which is lower compared with many prevalent proton-conductors for higher mobility while still ensuring the robustness at ambient conditions. This desirable feature can be utilized for constructing nanoscale artificial ionic synapses that may enable neuromorphic computing. In such a design of synaptic transistors, the migration of protons through those chains can be controlled and continuously change the conductance of MXene-based post-neuron for nonvolatile multilevel resistance. The success of mimicking synaptic functions will make such designs promising in future high-density artificial neutral systems.

1D Vertical Ferroelectricity in Functionalized Carbon/Boron Nitride Nanotubes

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Ferroelectric-carbon Nanotube Memory Devices.

One Dimensional Ferroelectric Nanothreads with Axial and Radial Polarization

Adjustable 1D ferroelectricity and ferrielectricity in faceted GeSe nanotubes

Nanotube ferroelectric tunnel junctions with giant tunneling electroresistance ratio

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

0D/1D organic ferroelectrics/multiferroics for ultrahigh density integration: Helical hydrogen-bonded chains, multi-mode switching, and proton synaptic transistors

Ferroelectricity in twisted double bilayer graphene

Ferroelectricity in Covalently Functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

Nanodomain Engineering for Programmable Ferroelectric Devices.

Vertical Ferroelectricity in Van der Waals Materials: Models and Devices

Vertical ferroelectricity in two-dimensional mixed-valence tin sulfide system: Unprecedented piezoelectricity, efficient nanogenerator and facile control of morphotoropic phase transformations

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Purely one-dimensional ferroelectricity and antiferroelectricity from van der Waals niobium oxide trihalides

Elemental Semimetal Ferroelectricity in Buckled Carbon Monolayers: Implications for Flexible Field-Effect Transistors

Ferroelectric metals in 1T/1T'-phase transition metal dichalcogenide MTe2 bilayers (M = Pt, Pd, and Ni)

Reconfigurable van der Waals Ferroionic Barristor for Multifunctional Nanoelectronics

Ferroelectricity in novel one-dimensional P42-InSeI nanowires

High-density Array of Ferroelectric Nanodots with Robust and Reversibly Switchable Topological Domain States

The rise of two‐dimensional van der Waals ferroelectrics