Ferroelectricity in twisted double bilayer graphene

Renjun Du,Jingkuan Xiao,Di Zhang,Xiaofan Cai,Siqi Jiang,Fuzhuo Lian,Kenji Watanabe,Takashi Taniguchi,Lei Wang,Geliang Yu

DOI: https://doi.org/10.1088/2053-1583/ad2107

2024-04-28

Abstract:Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in a AB-BA stacked twisted double bilayer graphene (TDBG) system. The ferroelectric polarization is prominent at zero external displacement field and reduces upon increasing displacement fields. TDBG in the AB-BA configuration possesses a superlattice of non-centrosymmetric domains, exhibiting alternatively switchable polarities even without the assistance of any boron nitride layers; however, in the AB-AB stacking case, the development of polarized domains necessitates the presence of a second superlattice induced by the adjacent boron nitride layer. Therefore, twisted multilayer graphene systems offer us a fascinating field to explore two-dimensional ferroelectricity.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The paper aims to address the following issues:

1. **Achieving 2D Ferroelectricity**: By constructing a twisted double bilayer graphene (TDBG) system, the researchers achieved the phenomenon of 2D ferroelectricity. Specifically, they studied the ferroelectric hysteresis phenomenon in the AB-BA stacked TDBG system.

2. **Exploring the Impact of Different Stacking Configurations**: The paper compares the TDBG systems of AB-BA stacking and AB-AB stacking, finding that the AB-BA stacked system can exhibit ferroelectricity without relying on a hexagonal boron nitride (hBN) layer, whereas the AB-AB stacking requires an additional hBN layer to induce ferroelectricity.

3. **Understanding the Microscopic Mechanism of Ferroelectricity**: The researchers explored the microscopic origins of ferroelectricity, including how interlayer lattice sliding affects ferroelectricity, and proposed the switching between asymmetric domains (such as ABCB and ABAC) as a possible mechanism for ferroelectricity.

4. **Providing Experimental Evidence for Ferroelectricity**: The hysteresis phenomenon of resistivity was observed experimentally, and the existence of ferroelectricity was demonstrated by changing the applied electric field.

5. **Discussing the Universality of Ferroelectricity in Complex Graphene Superlattice Systems**: The paper emphasizes the potential of twisted multilayer graphene systems in exploring 2D ferroelectricity and provides new evidence to enhance the understanding of this phenomenon.