Ferroelectric metals in 1T/1T'-phase transition metal dichalcogenide MTe2 bilayers (M = Pt, Pd, and Ni)

Haohao Sheng,Zhong Fang,Zhijun Wang

DOI: https://doi.org/10.1103/PhysRevB.108.104109

2023-09-23

Abstract:Ferroelectricity and metallicity cannot coexist due to the screening effect of conducting electrons, and a large number of stable monolayers with 1T/1T$^{\prime}$ phase lack spontaneous polarization due to inversion symmetry. In this work, we have constructed the $\pi$-bilayer structures for transition metal dichalcogenides ($M$Te$_2,M =$ Pt, Pd, and Ni) with van der Waals stacking, where two monolayers are related by $C_{2z}$ rotation, and have demonstrated that these $\pi$ bilayers are typical ferroelectric metals (FEMs). The $\pi$-bilayer structure widely exists in nature, such as 1T$^{\prime}$/T$_d$-TMD, $\alpha$-Bi$_4$Br$_4$. The computed vertical polarization of PtTe$_2$ and MoTe$_2$ $\pi$ bilayers are 0.46 and 0.25 pC/m, respectively. We show that the switching of polarization can be realized through interlayer sliding, which only requires crossing a low energy barrier. The interlayer charge transfer is the source of both vertical polarization and metallicity, and these properties are closely related to the spatially extended Te-$p_z$ orbital. Finally, we reveal that electron doping can significantly adjust the vertical polarization of these FEMs in both magnitude and direction. Our findings introduce a class of FEMs, which have potential applications in functional nanodevices such as ferroelectric tunneling junction and nonvolatile ferroelectric memory.

Materials Science

What problem does this paper attempt to address?

The paper attempts to address the issue of achieving the coexistence of ferroelectricity and metallicity in two-dimensional materials. Specifically, the paper explores how to break the centrosymmetry of these materials by constructing π-bilayer structures of transition metal dichalcogenides (MTe2, where M=Pt, Pd, and Ni), thereby introducing spontaneous polarization to achieve ferroelectricity while maintaining metallicity. The paper further investigates how the ferroelectric polarization in these π-bilayer structures can be switched through interlayer sliding, and that the energy barrier for this switching process is relatively low, making data storage and processing both fast and energy-efficient. Additionally, the paper discusses how electronic doping can significantly adjust the magnitude and direction of vertical polarization, providing new possibilities for future functional nanodevices, such as ferroelectric tunnel junctions and non-volatile ferroelectric memories.

The main contribution of the paper is the proposal of a new class of two-dimensional ferroelectric metallic materials. These materials not only exhibit significant ferroelectricity and metallicity but also have polarization properties that can be regulated by external conditions (such as electric fields and doping), demonstrating great application potential in the field of nanoelectronics.