Abstract:The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and opti- cal properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G0W0 scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene is very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangments different from the ground state structure in both bilayer and trilayer black phosphorus significantly modify valence bands along the zigzag direction and results in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. Due to strong interlayer interaction, some stackings obstruct the observation of the optical excitation of bound excitons within the quasi-particle band gap. In other stackings, the binding energy of bound excitons hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous.

Black Phosphorene/MoS2 van der Waals heterostructure: Electronic and optical properties

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Gate-tunable Photoresponse Time in BlackPhosphorus-MoS2Heterojunctions

Thickness Dependent Ultrafast Charge Transfer in BP/MoS2 Heterostructure

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction

Dominant n-type conduction and fast photoresponse in BP/MoS 2 heterostructures

Ultrafast photocarrier recombination dynamics in black phosphorus-molybdenum disulfide (BP/MoS2) heterostructure

Electronic and Optical Properties of van der Waals Heterostructures Based on Two-Dimensional Perovskite (PEA) 2 PbI 4 and Black Phosphorus

Mechanical strain and electric field tunable electronic structure of black/violet phosphorene van der Waals heterostructure: From type I to Z-scheme system

Layer-dependent Electronic Properties of Phosphorene-Like Materials and Phosphorene-Based Van Der Waals Heterostructures.

Multifunctional black phosphorus/MoS2 van der Waals heterojunction

Two-Dimensional van der Waals Heterostructures Constructed via Perovskite (C4H9NH3)2XBr4 and Black Phosphorus

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Modulated electronic and optical properties of bilayer/trilayer Blue Phosphorene/MoX2 (X=S, Se) van der Waals heterostructures

Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain and Layer Engineering

Interlayer angle-dependent electronic structure and optoelectronic properties of BP-MoS2 heterostructure: A first principle study

Remarkable effect of stacking on the electronic and optical properties of few layer black phosphorus

Revealing the Modulation Effects on the Electronic Band Structures and Exciton Properties by Stacking Graphene/h-BN/MoS2 Schottky Heterostructures.

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2