Abstract:Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each controlled by a single gate voltage. One-dimensional potentials are derived from a three-dimensional electrostatic model, and used to construct an effective Hamiltonian for efficient simulation. Control pulse sequences are designed by maintaining a fixed adiabaticity, so that different shuttling conditions can be systematically compared. We first use these tools to optimize the device geometry for maximum transport velocity, considering only orbital states and neglecting valley and spin degrees of freedom. Taking realistic geometrical constraints into account, charge shuttling speeds up to $\sim$300 m/s preserve adiabaticity. Coherent spin transport is simulated by including spin-orbit and valley terms in an effective Hamiltonian, shuttling one member of a singlet pair and tracking the entanglement fidelity. With realistic device and material parameters, shuttle speeds in the range 10-100 m/s with high spin entanglement fidelities are obtained when the tunneling energy exceeds the Zeeman energy. High fidelity also requires the inter-dot valley phase difference to be below a threshold determined by the ratio of tunneling and Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we find that the primary source of infidelity is a coherent spin rotation that is correctable, in principle. The results pertain to proposals for large-scale spin qubit processors in isotopically purified silicon that rely on coherent shuttling of spins to rapidly distribute quantum information between computational nodes.

Accuracy of a mechanical single electron shuttle

Exploiting the nonlinear impact dynamics of a single-electron shuttle for highly regular current transport

Uniform Random Sampling of Traces in Very Large Models

Electronic spin working mechanically

Nanoelectromechanics of shuttle devices

Accuracy of the quantum capacitor as a single-electron source

Single Molecular Shuttle-Junction: Shot Noise and Decoherence

Robustness of electron charge shuttling: Architectures, pulses, charge defects and noise thresholds

Adaptive Simulation for Single-Electron Devices

Incoherent dynamics of vibrating single-molecule transistors

Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis

Shot Noise in Electron Transport Through a Double Quantum Dot: A Master Equation Approach

Micromechanical electrometry of single-electron transistor island charge

Dissipated work and fluctuation relations for non-equilibrium single-electron transitions

Shuttle Instability in Self-Assembled Coulomb Blockade Nanostructures

High-fidelity single-spin shuttling in silicon

Resonant Tunneling and Charging Effects, a Path Integral Approach

Spin-detection in a quantum electromechanical shuttle system

Energy and temperature fluctuations in the single electron box

Simulated coherent electron shuttling in silicon quantum dots

Charge fluctuations in single-electron tunneling oscillations