Abstract:The development of semiconductor integrated circuits has been limited by the low utilization rate of refractory metal sputtering targets. Spark plasma sintering (SPS) technology has shown great superiority in the sintering and joining of materials, which can be applied to the repair of waste targets and improve the utilization rate. In this study, SPS technology was used to sinter-join the high-purity refractory metal W30Si sputtering powder and the target for integrated circuits to determine the optimal repair process and repair mechanism. The morphological characteristics, grain size, relative density, and Vickers hardness of the repair layer (powder-sintered body) and the target under different joining times were analyzed, and the interface structure and properties of the W30Si joint were also studied. It was found that the W30Si joint was composed of WSi2 and Si phases. The grain size, relative density, and Vickers hardness of the W30Si powder-sintered body and targets increased with the joining time. When the joining time was 10 min (1200 degrees C), the W30Si joint formed a "zigzag" joining interface, and the bending strength, relative density, grain size, Vickers hardness, and thermal conductivity of the joint were similar to those of the pristine target. In addition, the physical model of SPS sintered and joined refractory metal powders and targets was constructed. Studies have shown that the sinter-joining consists of three stages: early stage, middle stage, and late stage. Among them, the middle stage included two steps that may occur simultaneously, namely the sintering of refractory metal powders and the joining of refractory metal powders with the target, involving pressure welding, micro-arc welding, resistance welding, and diffusion welding mechanisms. This work can provide theoretical guidance for the optimal design of the SPS repair process for refractory metal W30Si sputtering targets.

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