Abstract:Atomic layer deposition (ALD) is a highly advanced thin film deposition technology that has found widespread use in nanoelectronics, photovoltaics, fuel cell and recently all-solid-state battery applications. It is widely regarded as the state-of-the-art technique for producing thin films due to its exceptional conformality on high-aspect ratio structures, atomic level thickness control, and tuneable film composition. In recent years, area-selective atomic layer deposition (AS-ALD) has emerged as a promising technology for high-fidelity nano-patterning, and significant progress has been made in understanding and developing highly selective processes for various material systems. Along these lines, we have recently shown that high-throughput, low defectivity, highly selective SiO 2 deposition can be achieved on various substrates by combining atmospheric-pressure spatial ALD with integrated area-deactivation using small molecule inhibitors and plasma-enhanced spatial etching [1]. ALD is a surface-controlled technique that relies on the self-limiting reactions of the precursors and co-reactants with the deposition surface in alternating cycles. The initial step in ALD nucleation on the target substrate is a key factor in the deposited film quality, and efficient precursor binding on the surface is critical. Molecular dynamics (MD) simulations and minimum-energy reaction pathway analysis based on ab initio Density Functional Theory (DFT) calculations provide invaluable insights into the surface chemistry, enabling customisation of ALD processes to boost uniformity, conformality, and area-selectivity of the resulting films. In this talk, I will discuss how first-principles simulations can be used synergistically with experimental findings to achieve high-efficiency plasma-enhanced atomic-layer cleaning (ALC) of impurities from various ALD films and substrates, design proper chemical surface modifications that enable continuous and conformal ALD nucleation even on chemically-inert surfaces (like graphene), and unveil the particular surface chemistry governing high-fidelity area-selectivity with an atomic-level precision in ultrathin coatings [1-9]. By combining the insights gained from first-principles simulations with experimental techniques, we can push the frontiers of device manufacturing to new heights, opening up exciting possibilities for further technological advances in nanoelectronics, photovoltaics, fuel cell and energy storage applications. [1] Advanced Materials , Just Accepted, (DOI: 10.1002/adma.202301204); [2] Nanoscale , 2021, 13, 10092-10099; [3] Chem. Mater. 2019 , 31 (4), 1250-1257.; [4] Adv. Mater. Interfaces 2018 , 5 (13), 1800268.; [5] Chem. Mater. 2017 , 29 (3), 921–925.; [6] ACS Nano 2017 , 11 (9), 9303–9311.; [7] Sol. Energy Mater. Sol. Cells 2017 , 163 , 43–50.; [8] Chem. Mater. 2017 , 29 (5), 2090–2100.; [9] Nanoscale 2016 , 8 (47), 19829–19845. Figure 1

Modeling ALD Surface Reaction and Process Dynamics using Absolute Reaction Rate Theory

Growth Per Cycle in Atomic Layer Deposition: Real Application Examplesof a Theoretical Model

Computational Modeling of Physical Surface Reactions of Precursors in Atomic Layer Deposition by Monte Carlo Simulations on a Home Desktop Computer

Modeling atomic layer deposition of alumina using reactive force field molecular dynamics

Atomic Layer Deposition Process Optimization by Computational Fluid Dynamics

Numerical Simulation of the Temperature Excursions of Porous Substrates During Atomic Layer Deposition

Modeling the impact of incomplete conformality during atomic layer processing

Kinetic Modeling of Surface-Initiated Atom Transfer Radical Polymerization

Real-Time Observation and Optimization of Tungsten Atomic Layer Deposition Process Cycle

The Mechanistic Effect over the Substrate in a Square Type Atomic Layer Deposition Reactor

First-Principles Predictions and in Situ Experimental Validation of Alumina Atomic Layer Deposition on Metal Surfaces

Analytic expressions for atomic layer deposition: Coverage, throughput, and materials utilization in cross-flow, particle coating, and spatial atomic layer deposition

Exploring TMA and H2O Flow Rate Effects on Al2O3 Thin Film Deposition by Thermal ALD: Insights from Zero-Dimensional Modeling

(Invited) Atomistic Insights into Continuous and Area-Selective ALD Processes: First-Principles Simulations of the Underpinning Surface Chemistry

Mechanistic Modeling Study on Process Optimization and Precursor Utilization with Atmospheric Spatial Atomic Layer Deposition

Accurately computed dimerization fraction of ALD precursors and their impact on surface reactivity in area-selective atomic layer deposition

Reactor scale simulations of ALD and ALE: ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor

Modeling scale-up of particle coating by atomic layer deposition

Theoretical study on tin oxide surface chemistry mechanism and thermodynamic properties for atomic layer deposition equipment optimization

The surface chemistry of the atomic layer deposition of metal thin films

Functional model for analysis of ALD nucleation and quantification of area-selective deposition