Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Intrinsic free carrier absorption limited THz generation from Bi2Te3 and Bi2Se3 topological insulators

Unveiling surface and bulk contributions in temperature dependent THz emission from Bi2Te3

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi 2 Se 3 Using Transient Absorption Spectroscopy

Enhanced Thermoelectric Performance in Three-Dimensional Superlattice of Topological Insulator Thin Films

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Three-dimensional Photonic Topological Insulator Without Spin–orbit Coupling

Impurity band assisted carrier relaxation in Cr doped topological insulator Bi 2 Se 3

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Impurity Band Assisted Carrier Relaxation in Cr Doped Topological Insulator Bi2Se3

Thickness-dependent Carrier and Phonon Dynamics of Topological Insulator Bi2Te3 Thin Films.

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Ultrafast Spectroscopy of Bi2Se3 Topological Insulator

Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3

Topological Insulators for High-Performance Terahertz to Infrared Applications

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

High-Index Topological Insulator Resonant Nanostructures from Bismuth Selenide

Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe 2

Characterization of charge-carrier dynamics at the Bi2Se3/MgF2interface by multiphoton pumped UV-Vis transient absorption spectroscopy

Micro-metric Electronic Patterning of a Topological Band Structure Using a Photon Beam