Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

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Ambipolar Field Effect in the Ternary Topological Insulator (bixsb1–x)2te3 by Composition Tuning

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

A computational investigation of topological insulator Bi2Se3 film

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

Quantum Oscillations and Nontrivial Transport in (Bi0.92in0.08)2se3

Synthesis of the 2D Ternary Topological Insulator Bi2‐xSbxSe3 with a Low Carrier Concentration and Ultrahigh Carrier Mobility

Coherent topological transport on the surface of Bi₂Se₃

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Quantum Oscillations of the Topological Surface States in Low Carrier Concentration Crystals of Bi_2-xSb_xTe_3-ySe_y

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3

Gate-tunable transport properties of in-situ capped Bi$_2$Te$_3$ topological insulator thin films

Possible Bipolar Effect Inducing Anomalous Transport Behavior in the Magnetic Topological Insulator Mn( Bi1−xSbx)2

Josephson Effect and Charge Distribution in Thin Bi$_2$Te$_3$ Topological Insulators

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Large Magnetoresistance in High Mobility Topological Insulator Bi2Se3

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures