Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

Effect of III-Nitride polarization on photo-current in N-polar GaN/InGaN p-n

Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Group III-nitride Alloys As Photovoltaic Materials

Polarization properties of wurtzite III nitride indicate the principle of polarization engineering

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

Charge transport in non-polar and semi-polar III-V nitride heterostructures

Characteristics Of Polarization-Doped N-Face Iii-Nitride Light-Emitting Diodes

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

Circular photogalvanic effect at inter-band excitation in InN

Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures

Stability and Electronic Properties of GaN Phases with Inversion Symmetry to Inherently Inhibit Polarization

Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies

Enhancement of the Conversion Efficiency of GaN-based Photovoltaic Devices with AlGaN/InGaN Absorption Layers

Piezo-phototronic Effect on Electroluminescence Properties of P-Type GaN Thin Films.

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Comparision Between Ga- and N-polarity InGaN Solar Cells with Gradient-in-composition Intrinsic Layers

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures