Abstract:The controllable large‐area growth of single‐crystal vertical heterostructures based on 2D transition metal dichalcogenides (TMDs) remains a challenge. Here, large‐area vertical MoS2/WS2 heterostructures are synthesized using single‐step confined‐space chemical vapor epitaxy. The heterostructures can evolve into two different kinds by switching the H2 flow on and off: MoS2/WS2 heterostructures with multiple WS2 domains can be achieved without introducing the H2 flow due to the numerous nucleation centers on the bottom MoS2 monolayer during the transition stage between the MoS2 and WS2 monolayer growth. In contrast, isolated MoS2/WS2 heterostructures with single WS2 domain can be obtained with introducing the H2 flow due to the reduced nucleation centers on the bottom MoS2 monolayer arising from the hydrogen etching effect. Both the two kinds of the vertical MoS2/WS2 heterostructures feature high quality. The photodetectors based on the isolated MoS2/WS2 heterostructures exhibit a high responsivity of 68 mA W−1 and a short response time of 35 ms. This single‐step chemical vapor epitaxy can be used to synthesize vertical MoS2/WS2 heterostructures with high production efficiency. The new epitaxial growth approach may open new pathways to fabricate large‐area heterostructures made of different 2D TMDs monolayers of interest to electronics, optoelectronics, and other applications.

Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Mixed Multilayered Vertical Heterostructures Utilizing Strained Monolayer WS2.

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Vertical Heterostructure of Two-Dimensional Mos2 and Wse2 with Vertically Aligned Layers

Interlayer Interactions In 2d Ws2/Mos2 Heterostructures Monolithically Grown By In Situ Physical Vapor Deposition

Two-dimensional atomic-scale ultrathin lateral heterostructures

Interlayer coupling of a direct van der Waals epitaxial MoS2/graphene heterostructure

Controllable Epitaxial Growth of Large-Area MoS2 /WS2 Vertical Heterostructures by Confined-Space Chemical Vapor Deposition.

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

One-Pot Selective Epitaxial Growth of Large WS2/MoS2 Lateral and Vertical Heterostructures.

Controllable Epitaxial Growth of Large‐Area MoS 2 /WS 2 Vertical Heterostructures by Confined‐Space Chemical Vapor Deposition

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure

Vapor Growth of WSe2/WS2 Heterostructures with Stacking Dependent Optical Properties

Direct synthesis of moiré superlattice through chemical vapor deposition growth of monolayer WS2 on plasma-treated HOPG