Abstract:Two-dimensional layered materials such as garphene, MoS2 and WSe2 have attracted considerable interest in recent times as semiconductor after Si and becoming an important material platform in condensed matter physics and modern electronics and optoelectronics. The studies to date however generally rely on mechanically exfoliated flakes which always be limtited to simple 2D materals, especially 2D lateral complicated structure can not be perpared through exfoliation strategy. Much like the traditional semiconductor technique, complicated structure such as controlling the space distribution of composition and electronic structure of two dimensional semiconductor material is essential to construct all modern electronic and optoelectronic devices, including transistors, p???n diodes, photovoltaic/photodetection devices, light-emitting diodes and laser diodes. And many physics phenomenon can only appear in more complicated structure. To fully explore the potential of this new class of materials, it is necessary to develop rational synthetic strategies of two dimensional lateral complicated struture, such as lateral heterostructure, multiheterostructure, superlattice, quantum well etc., With a relatively small lattice mismatch (~4%) between MoS2 and MoSe2 or WS2 and WSe2, it is possible to produce coherent MoS2???MoSe2 and WS2???WSe2 heterostructures through a lateral epitaxial process (Fig. 1a). Our studies indicate that simple sequential growth often fails to produce the desired heterostructures because the edge growth front can be easily passivated after termination of the first growth and exposure to ambient conditions. To retain a fresh, unpassivated edge growth front is important for successive lateral epitaxial growth. To this end, we have designed a thermal CVD process that allows in situ switching of the vapour-phase reactants to enable lateral epitaxial growth of single- or few-layer TMD lateral heterostructures. We used this technique to realize the growth of compositionally modulated MoS2??? MoSe2 and WS2???WSe2 lateral heterostructures. From the Fig. 1 b,c,d,e we can see the formation of WS2???WSe2 lateral heterostructures clearly. The WS2???WSe2 lateral heterostuctures with both p- and n-type characteristics can also allow us to construct many other functional devices, for example, a CMOS inverter. Fig. 1g is the optical image of the invert constructed using the WS2???WSe2 lateral heterostuctures and the curves of the output???input and the voltage gain. The voltage gain reaches as large as 24. In a typical sequential-growth process for 2D lateral heterostructure, the excessive thermal degradation or uncontrolled nucleation duringthe temperature swing between sequential growthsteps represents the key obstacle to reliable formation of monolayer heterostructure or other lateral complicated structure .We designed a modified CVD system.We used a reverse flow from the substrate to the source during the temperature swing between successive growth steps A forward flow from the chemical vapor sourcewas only applied at the exact growth temperature. With such reverse flow, the existing monolayer materials will not exposure to high temperature and chemical vapor source at the tempreture increasing and decreasing steps to minimize thermal degradation and eliminate uncontrolled homogeneous nucleation. With a high degree of controllability in each step, the integrity and quality of monolayer heterostructures can be well preserved after multiple sequential growth steps. We used our approach initially for the general synthesis of a wide range of 2D crystal heterostructures. We also grew more complex compositionally modulated superlattices or multiheterostructures, the number of periods and repeated spacing can be readily varied during growth. HADDF-STEM analysis of the atomic structure of the lateral heterostructures and Multiheterostructures show the atomically sharp interface can be clearly observed.

Two-dimensional atomic-scale ultrathin lateral heterostructures

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Facile synthesis of two-dimensional MoS2/WS2 lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method

Facile Synthesis of Two-Dimensional MoS 2 /WS 2 Lateral Heterostructures with Controllable Core/shell Size Ratio by a One-Step Chemical Vapor Deposition Method

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Vertical and in-plane heterostructures from WS2/MoS2 monolayers.

Interlayer Interactions In 2d Ws2/Mos2 Heterostructures Monolithically Grown By In Situ Physical Vapor Deposition

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2

Vertical and in-plane heterostructures from WS2/MoS2 monolayers

Synthesis of Two-Dimensional/one-dimensional Heterostructures with Tunable Width

Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.

Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS 2 via In Situ Scanning Transmission Electron Microscopy.

Two Dimensional Lateral Complicated Struture - Duan Xidong and Duan Xiangfeng

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments