Abstract:This work demonstrates a universal strategy for robust growth of high‐quality transition metal dichalcogenide (TMD) vertical heterostructures and a novel design concept for the fabrication of high mobility and high responsivity photodetectors based on 2D TMD vertical heterostructures, which holds promise for the next‐generation photodetectors. Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next‐generation electronic and optoelectronic applications due to their atomic‐scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in‐plane and out‐of‐plane growth, which makes it difficult to precisely control the growth of vertical heterostructures. Here, a universal and controllable strategy is reported to grow various 2D TMD vertical heterostructures through an ammonium‐assisted CVD process. The ammonium‐assisted strategy shows excellent controllability and operational simplicity to prevent interlayer diffusion/alloying and thermal decomposition of the existed TMD templates. Ab initio simulations demonstrate that the reaction between NH4Cl and MoS2 leads to the formation of MoS3 clusters, promoting the nucleation and growth of 2D MoS2 on existed 2D WS2 layer, thereby leading to the growth of vertical heterostructure. The resulting 2D WSe2/WS2 vertical heterostructure photodetectors demonstrate an outstanding optoelectronic performance, which are comparable to the performances of photodetectors fabricated from mechanically exfoliated and stacked vertical heterostructures. The ammonium‐assisted strategy for robust growth of high‐quality vertical van der Waals heterostructures will facilitate fundamental physics investigations and device applications in electronics and optoelectronics.

Vapor growth of WSe 2 /WS 2 heterostructures with stacking dependent optical properties

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Stacking-dependent exciton multiplicity in WSe$_2$ bilayers

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Distinguishing different stackings in WSe2 bilayers grown Using Chemical Vapor Deposition

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

Identification of Twist-Angle-dependent Excitons in WS2/WSe2 Heterobilayers

Strain-Directed Layer-By-Layer Epitaxy Toward van der Waals Homo- and Heterostructures

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure

Visualizing Van der Waals Epitaxial Growth of Two-Dimensional Heterostructures

Visualizing Van der Waals Epitaxial Growth of 2D Heterostructures

[A study on loneliness among people who lost their children in disaster area of 5.12 Earthquake].

Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium‐Assisted CVD Strategy

Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials

Band structures of molecular beam epitaxially grown MoSe2–WSe2 heterobilayers with different stacking orders on SrTiO3(111) substrate

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition