Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Visualizing Van der Waals Epitaxial Growth of 2D Heterostructures

Visualizing Van der Waals Epitaxial Growth of Two-Dimensional Heterostructures

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

A van der Waals pn heterojunction with organic/inorganic semiconductors

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials

Understanding epitaxial growth of two-dimensional materials and their homostructures.

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Dynamics of Antimonene–Graphene Van Der Waals Growth

Oriented Epitaxial Growth of Mixed-Dimensional van der Waals Heterostructures with One-Dimensional (1D) Bi 2 S 3 Nanowires and Two-Dimensional (2D) WS 2 Monolayers for Performance-Enhanced Photodetectors

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd 2 Se 3 -MoS 2 Heterostructures

Recent developments and future directions in the growth of nanostructures by van der Waals epitaxy.