Abstract:Rhombohedral multilayer graphene, with its flat electronic bands and concentrated Berry curvature, is a promising material for the realization of correlated topological phases of matter. When aligned to an adjacent hexagonal boron nitride (hBN) layer, the graphene develops narrow minibands with non-trivial topology. By tuning an externally-applied electric displacement field, the conduction electrons can either be pushed towards or away from the moiré superlattice. Motivated by the recent observation of the fractional quantum anomalous Hall effect (FQAHE) in the moiré-distant case, we study the opposite moiré-proximal case, where the superlattice potential is considerably stronger. We explore the physics within the moiré conduction bands through capacitance measurements that allow us to determine the inverse electronic compressibility and extract energy gaps of incompressible states. We observe integer and fractional Chern insulator states at superlattice filling factors v = 1, 2/3, and 1/3 with Streda slopes of -1, -2/3, and -1/3, respectively. Remarkably, the v = 1/3 state persists down to a magnetic field of 0.2 T. In addition, we also observe numerous trivial and topological charge density waves. We map out a phase diagram that is highly sensitive to both displacement and magnetic fields, which tune the system between various ground states by modifying the band dispersion and the structure of the electronic wavefunctions. This work demonstrates displacement field control of topological phase transitions in the moiré-proximal limit of rhombohedral pentalayer graphene, creating a highly-tunable platform for studying the interplay between intrinsic band topology and strong lattice effects.

Van Hove singularity and Lifshitz transition in thickness-controlled Li-intercalated graphene

Coexistence of Extended Flat Band and Kekulé Order in Li-intercalated Graphene

Structural and electronic properties of Li intercalated graphene on SiC(0001)

Li intercalation in graphite: a van der Waals density-functional study

Li-intercalated Graphene on SiC(0001): an STM study

Effects of lithium intercalation in bilayer graphene

Tunable van Hove singularities and correlated states in twisted monolayer–bilayer graphene

The Coexistence of van Hove Singularities and Superlattice Dirac Points in a Slightly Twisted Graphene Bilayer

Van-Hove tuning of Fermi surface instabilities through compensated metallicity

Electronic band structure and pinning of Fermi energy to Van Hove singularities in twisted bilayer graphene: A self-consistent approach

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures

Displacement field-controlled fractional Chern insulators and charge density waves in a graphene/hBN moiré superlattice

Controlling the Interlayer Coupling of Twisted Bilayer Graphene

Topological Phase Transition in a Graphene System with a Coexistence of Coulomb Interaction, Staggered Potential, and Intrinsic Spin-Orbit Coupling

Relativistic Mott transition in strongly correlated artificial graphene

Tunable van Hove Singularity without Structural Instability in Kagome Metal

Intercalation of Li at the Graphene/Cu Interface

SiC substrate-facilitated lithium-ion migration to modulate Kekulé-O graphene

Oscillations of the Spacing between van Hove Singularities Induced by sub-Ångstrom Fluctuations of Interlayer Spacing in Graphene Superlattices

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.