Abstract:Superconductivity can occur under conditions approaching broken-symmetry parent states<a href="/articles/s41586-019-1695-0#ref-CR1">1</a>. In bilayer graphene, the twisting of one layer with respect to the other at 'magic' twist angles of around 1 degree leads to the emergence of ultra-flat moiré superlattice minibands. Such bands are a rich and highly tunable source of strong-correlation physics<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="/articles/s41586-019-1695-0#ref-CR5">5</a>, notably superconductivity, which emerges close to interaction-induced insulating states<a href="/articles/s41586-019-1695-0#ref-CR6">6</a>,<a href="/articles/s41586-019-1695-0#ref-CR7">7</a>. Here we report the fabrication of magic-angle twisted bilayer graphene devices with highly uniform twist angles. The reduction in twist-angle disorder reveals the presence of insulating states at all integer occupancies of the fourfold spin–valley degenerate flat conduction and valence bands—that is, at moiré band filling factors ν = 0, ±1, ±2, ±3. At ν ≈ −2, superconductivity is observed below critical temperatures of up to 3 kelvin. We also observe three new superconducting domes at much lower temperatures, close to the ν = 0 and ν = ±1 insulating states. Notably, at ν = ± 1 we find states with non-zero Chern numbers. For ν = −1 the insulating state exhibits a sharp hysteretic resistance enhancement when a perpendicular magnetic field greater than 3.6 tesla is applied, which is consistent with a field-driven phase transition. Our study shows that broken-symmetry states, interaction-driven insulators, orbital magnets, states with non-zero Chern numbers and superconducting domes occur frequently across a wide range of moiré flat band fillings, including close to charge neutrality. This study provides a more detailed view of the phenomenology of magic-angle twisted bilayer graphene, adding to our evolving understanding of its emergent properties.

Relativistic Mott transition in strongly correlated artificial graphene

Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas

Visualizing delocalized correlated electronic states in twisted double bilayer graphene

Imaging Coulomb interactions and migrating Dirac cones in twisted graphene by local quantum oscillations

Tunable interplay between light and heavy electrons in twisted trilayer graphene

Tunable van Hove singularities and correlated states in twisted monolayer–bilayer graphene

Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic‐Angle Twisted Trilayer Graphene

Evidence of a gate-tunable Mott insulator in a trilayer graphene moiré superlattice

Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

Tunable correlation in twisted monolayer-trilayer graphene

Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene

Observation of first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene

Spectroscopic Evidence for a Spin- and Valley-Polarized Metallic State in a Nonmagic-Angle Twisted Bilayer Graphene

Dynamical correlations and order in magic-angle twisted bilayer graphene

Tunable spin-polarized correlated states in twisted double bilayer graphene

Pseudogap with Fermi arcs and Fermi pockets in half-filled twisted transition metal dichalcogenides

Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

Unconventional superconductivity in magic-angle graphene superlattices

Switchable Chern insulator, isospin competitions and charge density waves in rhombohedral graphene moire superlattices

Correlated States in Twisted Double Bilayer Graphene

DMRG study of strongly interacting $\mathbb{Z}_2$ flatbands: a toy model inspired by twisted bilayer graphene