Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

SiC substrate-facilitated lithium-ion migration to modulate Kekulé-O graphene

Lithium Intercalation Induced Decoupling of Epitaxial Graphene on SiC(0001): Electronic Property and Dynamic Process

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Effects of lithium intercalation in bilayer graphene

Lithiation of SiO2 in Li-ion Batteries: in Situ Transmission Electron Microscopy Experiments and Theoretical Studies.

Electron Transport Property of Epitaixial Bilayer Graphene on SiC Substrate

Structural and electronic properties of Li intercalated graphene on SiC(0001)

Li-intercalated Graphene on SiC(0001): an STM study

Fabrication and Characterization of Graphene Derived from SiC

Bi-intercalated epitaxial graphene on SiC(0001)

Calcium Intercalation Underneath N-layer Graphene on 6H-Sic(0001)

Preparation And Electrical Transport Properties Of Quasi Free Standing Bilayer Graphene On Sic (0001) Substrate By H Intercalation

Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene.

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Lithium Diffusion in Silicon Encapsulated with Graphene

Van Hove singularity and Lifshitz transition in thickness-controlled Li-intercalated graphene

In Operando Probing of Lithium‐Ion Storage on Single‐Layer Graphene

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

In-plane staging in lithium-ion intercalation of bilayer graphene

Probing the Superconductivity Limit of Li‐Doped Graphene