Intestinal type alkaline phosphatase hyperphosphatasemia associated with liver cirrhosis.

S. Saheki,M. Ochi,T. Horiuchi,Y. Sakagishi,Y. Fujimori-Arai,I. Koyama,T. Komoda,N. Takeuchi

DOI: https://doi.org/10.1016/0009-8981(92)90046-S

1992-09-15

Abstract:

What problem does this paper attempt to address?

Conductance in graphene through double laser barriers and magnetic field

Rachid El Aitouni,Miloud Mekkaoui,Abdelhadi Bahaoui,Ahmed Jellal

2024-10-18

Abstract:Photon-assisted charge transport through a double barrier laser structure, separated by a region assisted by a magnetic field, is studied. Employing Floquet theory and matrix formalism, the transmission probabilities for the central band and sidebands are calculated. The temporal periodicity of the laser fields creates an infinite number of transmission modes due to the degeneracy of the energy spectrum. The challenge of numerically addressing all modes necessitates the limitation to the first sideband corresponding to energies $\varepsilon\pm\varpi$. A critical phase difference between the two laser fields is found to cancel the transmission through the sidebands due to quantum interference. Varying the width of the region where the magnetic field is applied allows for the suppression of lateral transmission and control over the transmission mode. The intensity of the laser fields also allows for suppressing Klein tunneling and blocking transmission processes with zero photon exchange, as well as activating transmission processes with photon exchange. The conductance is also affected by changes in the system parameters. Increasing the intensity of the laser field reduces the conductance due to the confinement of the fermions by the laser fields. In addition, increasing the size of the region where the magnetic field is applied reduces the conductance because the increased distance gives the fermions a greater chance of diffusion and increases their interaction with the magnetic field.

Mesoscale and Nanoscale Physics
Resonant Tunneling of Holes in Double-Barrier Structures in the Presence of an In-Plane Magnetic Field

JX Zhu,ZD Wang,CD Gong

DOI: https://doi.org/10.1063/1.363058

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:Using the asymptotic transfer-matrix method, we investigate the resonant tunneling of holes in double-barrier semiconductor structures in the presence of an in-plane magnetic field. The transmission coefficients including ll (light to light hole), hl (light to heavy hole), hh (heavy to heavy hole), and lh (heavy to light hole) are calculated as a function of energy. As in the case of nonzero parallel wave vectors, the mixing of hole tunneling can also occur due to the in-plane magnetic field. Moreover, as has been observed by resonant magnetotunneling spectroscopy, we also find that the different resonances have quite different magnetic-field dependences.
Nonlinear Transport in Tunnel Magnetoresistance Systems

L Sheng,Y Chen,HY Teng,CS Ting

DOI: https://doi.org/10.1103/physrevb.59.480

1999-01-01

Abstract:The nonlinear electronic tunneling through ferromagnet (FM)/insulator (I)/FM single-barrier and FM/I/FM/I/FM double-barrier magnetic layered structures is studied using the Landauer-Buttiker scattering approach. For the single-barrier junctions, the resulting bias dependence of tunnel magnetoresistance is qualitatively in agreement with experimental observation. The absolute value of magnetoresistance is shown to be enhanced in the double-barrier systems. Under suitable conditions. large negative and positive magnetoresistance effects occur alternately with increasing bias voltage. These features make double-barrier resonant-tunnel structures more attractive magnetoresistance devices. [S0163-1829(99)07301-4].
Electronic Transport in Nanostructures Consisting of Magnetic Barriers.

JQ You,L Zhang,PK Gosh

DOI: https://doi.org/10.1103/physrevb.52.17243

1995-01-01

Abstract:We study the transport properties of the nanostructures consisting of magnetic barriers produced by the deposition of ferromagnetic stripes on heterostructures. It is shown that the electron tunneling through multiple-barrier magnetic structures exhibits complicated resonant features. Due to the averaging of the transmission over half the Fermi surface, the conductance has, however, much simpler resonant structure. As for the single-barrier magnetic structures, our calculations show that the conductance preserves the main feature of the electron tunneling.
Plasmonic Tunnel Junctions(Invited)

Feng Yuanjia,Zheng Junsheng,Yang Ruoxue,Wang Pan

DOI: https://doi.org/10.3788/lop232668

2024-01-01

Laser & Optoelectronics Progress

Abstract:Plasmonic tunnel junctions are metal-insulator-metal structures with a nanoscale dielectric gap that can simultaneously support surface plasmons and electron tunneling.The extremely strong confinements and interactions of electrons,plasmons,and photons in the junctions provide a novel platform,merging electronics and photonics for studying and manipulating electrons and photons at the nanoscale.In this review,the recent progress in the field of plasmonic tunnel junctions is overviewed as concerns their applications in plasmon/light generation and plasmon/light-electron conversion.
Study on tunneling phenomena in magnetic barrier structures

Yong Guo,Binglin Gu

IF: 4.632

1997-01-01

Journal of Rare Earths

Abstract:Effects of electron tunneling through asymmetric double-barrier magnetic nano-structures are inspected with transfer-matrix method. It is found that comparing with electron tunneling through symmetric double-barrier magnetic structures, both the transmission and the conductance are drastically reduced for electron tunneling through asymmetric double-barrier magnetic structures, and the asymmetric magnetic structure possesses stronger wave vector filtering properties.
Transmission in graphene through a double laser barrier

Rachid El Aitouni,Miloud Mekkaoui,Ahmed Jellal

DOI: https://doi.org/10.1088/1402-4896/ad418a

2024-04-24

Physica Scripta

Abstract:We study the tunneling behavior of Dirac fermions in graphene subjected to a double barrier potential profile created by spatially overlapping laser fields. By modulating the graphene sheet with an oscillating structure formed from two laser barriers, we aim to understand how the transmission of Dirac fermions is influenced by such a light-induced electric potential landscape. Using the Floquet method, we determine the eigenspinors of the five regions defined by the barriers applied to the graphene sheet. Applying the continuity of the eigenspinors at barrier edges and using the transfer matrix method, we establish the transmission coefficients. These allow us to show that oscillating laser fields generate multiple transmission modes, including zero-photon transmission aligned with the central band and photon-assisted transmission at sidebands , with and frequency . For numerical purposes, our attention is specifically directed towards transmissions related to zero-photon processes ( ), along with processes involving photon emission ( ) and absorption ( ). We find that transmission occurs only when the incident energy is above the threshold energy , {\bb with transverse wave vector }. We find that the variation in distance {\bb separating two barriers of widths } suppresses one transmission mode. Additionally, we show that an increase in laser intensity modifies transmission sharpness and amplitude.

physics, multidisciplinary
Attoclock reveals geometry for laser-induced tunneling

Adrian N. Pfeiffer,Claudio Cirelli,Mathias Smolarski,Darko Dimitrovski,Mahmoud Abu-samha,Lars Bojer Madsen,Ursula Keller

DOI: https://doi.org/10.48550/arXiv.1103.4803

2011-04-15

Abstract:Tunneling plays a central role in the interaction of matter with intense laser pulses, and also in time-resolved measurements on the attosecond timescale. A strong laser field influences the binding potential of an electron in an atom so strongly, that a potential barrier is created which enables the electron to be liberated through tunneling. An important aspect of the tunneling is the geometry of the tunneling current flow. Here we provide experimental access to the tunneling geometry and provide a full understanding of the laser induced tunnel process in space and time. We perform laser tunnel ionization experiments using the attoclock technique, and present a correct tunneling geometry for helium and argon. In addition for argon the potential barrier is significantly modified by all the electrons remaining in the ion, and furthermore from a quantum state whose energy is Stark-shifted by the external field. The resulting modified potential geometry influences the dynamics of the liberated electron, changes important physical parameters and affects the interpretation of attosecond measurements. These effects will become even more pronounced for molecules and surfaces, which are more polarizable.

Atomic Physics
Electron Tunneling Through Double Magnetic Barriers On The Surface Of A Topological Insulator

Zhenhua Wu,François Maria Peeters,Kai Chang

DOI: https://doi.org/10.1103/PhysRevB.82.115211

IF: 3.7

2010-01-01

Physical Review B

Abstract:We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.
Giant Magnetoelectric Effect in Magnetic Tunnel Junctions Coupled to an Electromagnetic Environment

Mircea Trif,Pascal Simon

DOI: https://doi.org/10.1103/physrevb.90.174431

IF: 3.7

2014-01-01

Physical Review B

Abstract:We study the magnetization dynamics in ferromagnet-insulator-ferromagnet and ferromagnet-insulator-normal metal ultrasmall tunnel junctions, and the associated voltage drop in the presence of an electromagnetic environment assisting the tunneling processes. We show that the environment strongly affects the resulting voltage, which becomes a highly nonlinear function of the precession cone angle theta. We find that voltages comparable to the driving frequency. can be reached even for small precession cone angles theta, in stark contrast to the case where the environment is absent. Such an effect could be useful for the detection local magnetization precessions in textured ferromagnets or, conversely, for probing the environment via the magnetization dynamics.
Light-field Assisted Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Li Chun-Lei,Xu Yan,Zheng Jun,Wang Xiao-Ming,Yuan Rui-Yang,Guo Yong

DOI: https://doi.org/10.7498/aps.69.20200237

IF: 0.906

2020-01-01

Acta Physica Sinica

Abstract:Based on the Floquet theory and transfer-matrix method, We investigated the influence of light-field on the spin-polarized transport properties for electrons tunneling through two kinds of magnetic-electric barrier structures (the \begin{document}$\delta$\end{document}-doped magnetic-barrier can be realized in experiments by depositing two ferromagnetic stripes on top and bottom of a semiconductor heterostructure and the light-field can be realized by placing a hemispherical silicon lens on the back surface of the semiconductor substrate). Transport properties result from the interaction of electrons with the light-field by means of photon absorption and emission. It is found that the light-field can greatly affect the transmission probabilities as well as the corresponding polarizations. The distance between the adjacent peaks and the number of the transport peaks can be controlled by adjusting the frequency and the amplitude of the light-field, respectively. It is shown that a significant spin-polarization effect can be induced by such light-field in the kind of antisymmetric magnetic barrier structure (\begin{document}$B_{1}=-B_{2}$\end{document}) and the light-field can greatly change the spin-polarization effect in the kind of symmetric magnetic barrier structure (\begin{document}$B_{1}=B_{2}$\end{document}). When the frequency of the light-field increases, the spin-polarization shifts toward the low-energy end and gradually increases. These remarkable properties of spin polarization may be beneficial for the devising tunable spin filtering devices.
Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier

Chun-Lei Li,Yan Xu,Yong Guo

DOI: https://doi.org/10.1142/s2010324718400076

2018-01-01

SPIN

Abstract:Using the Floquet theory and effective-mass approximation theory, we have investigated the terahertz (THz) photon-assisted transport through a magnetic-field tunable diluted magnetic semiconductor (DMS) structure with a nonmagnetic barrier under multi-physical fields, including an external magnetic field, an electric field and a THz field. It is found that a THz field and an electric field can greatly affect the transmission coefficient and current density as well as the corresponding polarizations. As a result, some asymmetric ‘Fano’ type transmission resonance appear at some specific energy. With the applied bias increasing, some quasi platforms of the polarization began to take shape. Furthermore, the transmission coefficient suppression or augmentation can be clearly seen from the variation tendency of current density. It is noteworthy that the amplitude of current–density polarization becomes larger under a THz field and a small magnetic field. These remarkable properties of spin polarization might be beneficial to the design of spin filtering devices.
Magnetoresonant tunneling of electrons in asymmetric multibarrier heterostructures

Yong Guo,Xiangdong Zhang,Wenhui Duan,Binglin Gu

1997-01-01

Abstract:Taking Hermitian functions as envelope functions, the transverse magnetic field effect on resonant-tunneling of electrons in asymmetric multibarrier parabolic-well heterostructures was systematically studied. The results reveal that as to double-barrier structures, the peak transmission coefficient can be enhanced or reduced by increasing the magnetic field; as to triple-barrier structures, due to coupling of quasibound states in a two-quantum well, the peak-value of the transmission coefficient exhibits different behavior. The first peak-value decreases monotonously with increasing the magnetic field, while the second peak value on the outset decreases and then increases up to nearly unity-value and finally decreases again. It is also found that certain asymmetric multibarrier heterostructures possess better magnetic characteristics than symmetric heterostructures. Considering this effect and electric effect together will be helpful for designing resonant-tunneling systems.
Light controlled photon tunneling

I.I. Smolyaninov,A.V. Zayats,C.C. Davis

DOI: https://doi.org/10.1063/1.1518778

2002-05-08

Abstract:Recent measurements of photon tunneling through individual subwavelength pinholes in a gold film covered with a layer of polydiacetylene (Phys. Rev. Letters 88, 187402 (2002)) provided strong indication of "photon blockade" effect similar to Coulomb blockade phenomenon observed in single-electron tunneling experiments. Here we report first observation of photon tunneling been blocked (gated) by light at a different wavelength. This observation suggests possibility of building new class of photon tunneling gating devices for all-optical signal processing.

Strongly Correlated Electrons
Unified Treatment of Light Emission by Inelastic Tunneling: Interaction of Electrons and Photons beyond the Gap

Unai Muniain,Ruben Esteban,Javier Aizpurua,and Jean-Jacques Greffet

DOI: https://doi.org/10.1103/physrevx.14.021017

2024-04-25

Physical Review X

Abstract:A direct current through a metal-insulator-metal tunneling junction emits light when surface-plasmon polaritons (SPPs) are excited. Two distinct processes are believed to coexist in this light emission mediated by surface plasmons: inelastic tunneling, where electrons excite SPPs in the insulator gap, and hot-electron radiative decay, which occurs in the electrodes after elastic tunneling. Previous theoretical approaches to study light emission by inelastic tunneling have relied on Bardeen's approximation where the electronic wave functions are considered only in the barrier of the junction. In this work, we introduce an extension to models of inelastic tunneling by incorporating the full quantum device solution of the Schrödinger equation, which can also account for processes in the metallic electrodes. The extension unveils the existence of long-range correlations of the current density across the barrier and enables us to establish the equivalence between two models widely used in the past: (i) a calculation of the inelastic transition rate between two states across the barrier based on Fermi's golden rule and (ii) a calculation of the power transferred to plasmons by current fluctuations. Importantly, the new model accounts for processes that take place in the metallic electrodes and that could not be described within Bardeen's approximation. Hence, it is no longer necessary to invoke a hot-electron mechanism to obtain a dependence on the geometry of metallic electrodes. The new framework enables to discuss the role of surface plasmons localized in different metal-insulator interfaces and to include possible nonlocal effects at the interfaces. https://doi.org/10.1103/PhysRevX.14.021017 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

physics, multidisciplinary
Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Zhiming Zheng,Yunong Qi,D. Xing,Jinming Dong

DOI: https://doi.org/10.1103/PhysRevB.59.14505

IF: 3.7

1999-01-01

Physical Review B

Abstract:Based on an extended Slonczewski model with double delta-type potential barriers, we study spin-dependent resonant tunneling conductances in a double-tunnel-junction structure, in which two ferromagnetic electrodes are separated from a middle nonmagnetic layer of thickness a by two thin insulating layers, respectively. It is shown that as the thickness a is increased, the tunneling magnetoresistance, along with the tunneling conductance for parallel and antiparallel magnetization configurations, exhibits amplitude-varying oscillating behavior with a period of a = pi/k(F) (k(F) being the Fermi wave vector). This abnormal phenomenon is found to stem from the spin-dependent resonant transmission of electrons passing through the double-tunnel-junction structure. [S0163-1829(99)00122-8].
Resonant Photon-Assisted Tunneling Through a Coupled Double-Quantum-Dot System

SF Du,QF Sun,TH Lin

DOI: https://doi.org/10.1088/0253-6102/33/2/185

2000-01-01

Communications in Theoretical Physics

Abstract:An analytical formula of the tunneling current through a coupled double-quantumdot system in the presence of a time-dependent electric field is obtained by using the Keldysh nonequilibrium Green's function technique. The dependence of the time-averaged current on the frequency of the electric field, as well as the dependence of the multiphoton assisted tunneling on the strength of the electric field are studied. The features of characteristic are also investigated. Besides, we present a simplified formula which can be used to determine the heights of the resonant peaks conveniently.
Resonant Tunneling In Step-Barrier Structures Under An Applied Electric Field

Yong Guo,Binglin Gu,JingZhi Yu,Zhong Zeng,Yoshiyuki Kawazoe

DOI: https://doi.org/10.1063/1.368156

IF: 2.877

1998-01-01

Journal of Applied Physics

Abstract:Resonant tunneling in step-barrier structures is investigated by using the transfer-matrix technique. The formulas for the transmission coefficient and the current density are derived when taking into account the coupling between components of the motion of an electron in directions parallel and perpendicular to the interfaces. By making a detailed comparison of resonant tunneling among single square-barrier structures, asymmetric double-barrier structures, and step-barrier structures, the tunneling properties in step-barrier structures are revealed. It is shown that the global behavior of step-barrier structures obtained resembles that of asymmetric double-barrier structures, and step-barrier structures are superior to both single- and double-barrier structures in many aspects. In comparison to asymmetric double-barrier structures, step-barrier structures have several features, such as a wider negative-differential resistance region, easier fabrication, high-speed response, and a relatively lower transmission coefficient and current peak-to-valley ratios. Moreover, higher resonant bias is required in order to obtain optimal transmission resonances in the step-barrier structure. The results shown in this work not only shed new light on the physics of resonant tunneling in electric-barrier structures but are also helpful in designing quantum devices based on step-barrier tunneling structures. (C) 1998 American Institute of Physics. [S0021-8979(98)00214-X].
Tunneling through ferromagnetic barriers on the surface of a topological insulator

Jinhua Gao,Wei-Qiang Chen,Xiao-Yong Feng,X. C. Xie,Fu-Chun Zhang

2009-01-01

Abstract:We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various transmission regions, where the wavevector-dependent tunnelings are quite different. We find that the Klein tunneling can be manipulated or even be turned off. These special properties offer the possibility to control electron beams on the "topological metal". Various novel devices, such as electronic collimation, wavevector filter, magnetic and electric switchs, and wavevector-based spin valve, may be constructed based on our observed phenomena.

Intestinal type alkaline phosphatase hyperphosphatasemia associated with liver cirrhosis.

Conductance in graphene through double laser barriers and magnetic field

Resonant Tunneling of Holes in Double-Barrier Structures in the Presence of an In-Plane Magnetic Field

Nonlinear Transport in Tunnel Magnetoresistance Systems

Electronic Transport in Nanostructures Consisting of Magnetic Barriers.

Plasmonic Tunnel Junctions(Invited)

Study on tunneling phenomena in magnetic barrier structures

Transmission in graphene through a double laser barrier

Attoclock reveals geometry for laser-induced tunneling

Electron Tunneling Through Double Magnetic Barriers On The Surface Of A Topological Insulator

Giant Magnetoelectric Effect in Magnetic Tunnel Junctions Coupled to an Electromagnetic Environment

Light-field Assisted Spin-Polarized Transport Properties in Magnetic-Electric Barrier Structures

Photon-Assisted Spin-Dependent Tunneling in a Magnetic-Field Tunable Diluted Magnetic Semiconductor Structure with a Nonmagnetic Barrier

Magnetoresonant tunneling of electrons in asymmetric multibarrier heterostructures

Light controlled photon tunneling

Unified Treatment of Light Emission by Inelastic Tunneling: Interaction of Electrons and Photons beyond the Gap

Oscillating Tunneling Magnetoresistance In Magnetic Double-Tunnel-Junction Structures

Resonant Photon-Assisted Tunneling Through a Coupled Double-Quantum-Dot System

Resonant Tunneling In Step-Barrier Structures Under An Applied Electric Field

Tunneling through ferromagnetic barriers on the surface of a topological insulator