Abstract:We study the properties of Dirac fermions on the surface of a topological insulator in the presence of crossed electric and magnetic fields. We provide an exact solution to this problem and demonstrate that, in contrast to their counterparts in graphene, these Dirac fermions allow relative tuning of the orbital and Zeeman effects of an applied magnetic field by a crossed electric field along the surface. We also elaborate and extend our earlier results on normal metal-magnetic film-normal metal (NMN) and normal metal-barrier-magnetic film (NBM) junctions of topological insulators [Phys. Rev. Lett. {\bf 104}, 046403 (2010)]. For NMN junctions, we show that for Dirac fermions with Fermi velocity $v_F$, the transport can be controlled using the exchange field ${\mathcal J}$ of a ferromagnetic film over a region of width $d$. The conductance of such a junction changes from oscillatory to a monotonically decreasing function of $d$ beyond a critical ${\mathcal J}$ which leads to the possible realization of magnetic switches using these junctions. For NBM junctions with a potential barrier of width $d$ and potential $V_0$, we find that beyond a critical ${\mathcal J}$, the criteria of conductance maxima changes from $\chi= e V_0 d/\hbar v_F = n \pi$ to $\chi= (n+1/2)\pi$ for integer $n$. Finally, we compute the subgap tunneling conductance of a normal metal-magnetic film-superconductor (NMS) junctions on the surface of a topological insulator and show that the position of the peaks of the zero-bias tunneling conductance can be tuned using the magnetization of the ferromagnetic film. We point out that these phenomena have no analogs in either conventional two-dimensional materials or Dirac electrons in graphene and suggest experiments to test our theory.

Tunneling through ferromagnetic barriers on the surface of a topological insulator

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Electron Tunneling Through Double Magnetic Barriers On The Surface Of A Topological Insulator

Controllable Electron Transport on the Surface of a Topological Insulator

Electron Transport in a Ferromagnetic/normal/ferromagnetic Tunnel Junction Based on the Surface of a Topological Insulator

Tunable Magnetic-Resistance for Topological Insulator Thin Film Modulated by a FM/N/FM Junction

Magnetotransport of Dirac Fermions on the surface of a topological insulator

Gate-Voltage Controlled Electronic Transport Through A Ferromagnet/Normal/Ferromagnet Junction on the Surface of A Topological Insulator

Electronic Transport in Ferromagnetic Barriers on the Surface of a Topological Insulator with Δ Doping

Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

Chiral Tunneling Modulated by a Time-Periodic Potential on the Surface States of a Topological Insulator

Manipulating Surface-Related Ferromagnetism in Modulation-Doped Topological Insulators.

Electrically tuned magnetic order and magnetoresistance in a topological insulator

Electrically Tunable Magnetism in Magnetic Topological Insulators

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Electrically Tunable Crossed Andreev Reflection in a Ferromagnet–superconductor–ferromagnet Junction on a Topological Insulator

One-way Transmission of Electrons on the Topological Insulator Surface Modulated by Magnetic Potential

Quantized Field-Effect Tunneling Between Topological Edge or Interface States

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB6

Manipulating Surface States in Topological Insulator Nanoribbons