Abstract:The difficulty in the fabrication of p-type ZnO hinders the development of ZnO-based devices. Group-Ⅰand group-Ⅴ elements substituting for Zn and O can respectively form the different acceptor dopants. Park C H calculated the energy levels of different acceptor dopants in ZnO, and it is found that group-Ⅰ elements substituting for Zn are of a shallower acceptor level than group-V elements substituting for O. Especially the acceptor level of Li substituting for Zn (Li_ Zn ) is 0.09 eV, which is the shallowest value among the energy levels of acceptor dopants in ZnO reported. However, when Li atom substitutes for Zn, it will easily be accompanied by the formation of interstitial Li (Li_i), which is likely to be shallow donor. This causes the p-type doping to be limited by the formation of a Li_ Zn -Li_i complex donor. Based on above, Li was used as the acceptor dopant substituting for Zn in this work. In order to repress the formation of Li_i, nitrogen was used as a codopant with lithium by a two step annealing process to form Li_ Zn -N complex acceptor. The electrical and photoluminescence (PL) characteristics of p-type ZnO∶Li are discussed. As compa- rison , the electrical and photoluminescence (PL) characteristics of the undoped ZnO grown under the same condition were also measured. By the measurement of Hall effect, it is shown that the room-temperature p-type ZnO∶Li resistivity is of 678.34 Ω·cm with a Hall mobility of 1.03 cm~2·V~ -1 · s~ -1 and a carrier concentration of 8.934×10~ 15 cm~ -3 . By the measurement of room-temperature photoluminescence (PL), it is found that the near band-edge PL peak of p-type ZnO∶Li shift to the lower energy by 23 meV than that of the undoped ZnO. By the measurement of low-temperature (12 K) photoluminescence (PL), the optical level of the Li_ Zn -N complex acceptor is estimated to be about 137 meV.

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