Abstract:Ultra-wide bandgap (UWBG) semiconductors have great potential for high-power electronics, radio frequency electronics, deep ultraviolet optoelectronic devices, and quantum information technology. Recently, the two-dimensional UWBG GaPS 4 was first applied to the solar-blind photodetector in experiments, which was found to have remarkable performance, such as high responsivity, high quantum efficiency, etc., and promising applications in optoelectronic devices. However, the knowledge of monolayer (ML) GaPS 4 for us is quite limited, which hinders its design and application in optoelectronic devices. Here, we focus on the properties of electronic structure and intrinsic defects in ML GaPS 4 by first-principles calculations. We confirmed that the fundamental gap of ML GaPS 4 is 3.87 [Formula: see text], while the optical gap is 4.22 [Formula: see text]. This discrepancy can be attributed to the inversion symmetry of its structure, which limits the dipole transitions from valence band edges to conduction band edges. Furthermore, we found that intrinsic defects are neither efficient p-type nor n-type dopants in ML GaPS 4 , which is consistent with experimental observations. Our results also show that if one expects to achieve p-type ML GaPS 4 by selecting the appropriate dopant, P-rich conditions should be avoided for the growth process, while for achieving n-type doping, S-rich growth conditions are inappropriate. This is because due to the low strain energy, [Formula: see text] has very low formation energy, which leads to the Fermi levels ([Formula: see text]) pinning at 0.35 [Formula: see text] above the valence band maximum and is not beneficial to achieve p-type ML GaPS 4 under the P-rich conditions; the large lattice relaxation largely lowers the formation energy of [Formula: see text], which causes the [Formula: see text] pinning at 0.72 [Formula: see text] below the conduction band minimum and severely prevents ML GaPS 4 from being n-type doping under the S-rich conditions. Our studies of these fundamental physical properties will be useful for future applications of ML GaPS 4 in optoelectronic devices.

Spinel LiGa$_5$O$_8$ prospects as ultra-wideband-gap semiconductor: band structure, optical properties and doping

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Native defects and their complexes in spinel LiGa5O8: the puzzle of p-type doping

Deep polaronic acceptors in LiGa5O8

Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface

Bandgap engineering of spinel-structured oxide semiconductor alloys

Ab initio Electronic Structure Study for Heavy Fermion Spinel LiV2 O4

First-principles Study of the Bandgap Renormalization and Optical Property of Β-Ligao_2

Accelerating the discovery of direct bandgap doped-spinel photovoltaic materials: A target-driven approach using interpretable machine learning

Direct Determination of Band-Gap Renormalization in Degenerately Doped Ultrawide Band Gap Β- Ga2O3 Semiconductor

Theoretical insights into the defect performance of the wide bandgap semiconductor BaS.

Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate

Quasiparticle self-consistent $GW$ band structures and phase transitions of LiAlO$_2$ in tetrahedrally and octahedrally coordinated structures

Ab initio study of the magnetic, optical and electronic properties of spinel Co3O4 within DFT and GW approaches

Size match reducing dislocations within lattice leads to ultrawide band gap, large second order susceptibility and high nonlinear optical performance of AgGaS2.

A New Spin Gapless Semiconductors Family: Quaternary Heusler Compounds

Optical response and band structure of LiCoO2 including electron-hole interaction effects

Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices

Electronic Structure and P-Type Conduction Mechanism of Spinel Cobaltite Oxide Thin Films

Theoretical Investigations of the High-Pressure Optical Properties of Γ-Si<sub>3</sub>n<sub>4</sub>

Dislocations that Decrease Size Mismatch within the Lattice Leading to Ultrawide Band Gap, Large Second‐Order Susceptibility, and High Nonlinear Optical Performance of AgGaS <sub>2</sub>