Passively Q-switched Er,Yb:GdMgB 5 O 10 microchip laser with Cr:ZnS thin layer saturable absorber

K N Gorbachenya,E A Volkova,V V Maltsev,E V Koporulina,N V Kuleshov,V E Kisel
DOI: https://doi.org/10.1088/1612-202x/ad7c25
IF: 1.704
2024-09-27
Laser Physics Letters
Abstract:We demonstrate continuous wave and passively Q-switched Er,Yb:GdMgB 5 O 10 microchip lasers emitting in the spectral range of 1.5–1.6 μm. A maximal output power of 220 mW was obtained at 1568 nm at an absorbed pump power of 2.3 W with a slope efficiency of 18%. By using an MBE-grown Cr:ZnS thin layer as a saturable absorber laser pulse with a duration of 24 ns and an energy of 3 μJ at a repetition rate of 50 kHz were obtained at a wavelength of 1568 nm.
optics,physics, applied
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