Passive Q-switching of an Yb:GdCa4O(BO3)(3) Laser Induced by a Few-Layer Bi2Te3 Topological Insulator Saturable Absorber

Jingnan Yang,Yuhang Li,Kan Tian,Fenfen Liu,Xiaodan Dou,Yanjun Ma,Wenjuan Han,Honghao Xu,Junhai Liu

DOI: https://doi.org/10.1088/1612-202x/aae5b0

IF: 1.704

2018-01-01

Laser Physics Letters

Abstract:We report on efficient passively Q-switched operation of an Yb:GdCa4O(BO3)(3) laser induced by a few-layer Bi2Te3 topological insulator saturable absorber. A maximum average output power of 2.38 W is produced at a repetition rate of 325kHz with a slope efficiency of 36%; the resulting pulse energy, duration, and peak power are respectively 7.32 mu J, 104 ns, and 70.4 W. The results obtained in our work demonstrate the potential of Yb:GdCa4O(BO3)(3) crystal in the development of passively Q-switched solid-state lasers using 2D topological insulator saturable absorbers.