Abstract:An experimental investigation was carried out to evaluate the potential of few-layer Bi2Te3 topological insulator in use as a saturable absorber for passive Q-switching of compact solid-state lasers in the 1-μm spectral region. By incorporating a sapphire-based few-layer Bi2Te3 sample into a Yb:LuPO4 laser that was formed with a 4-mm plane-parallel resonator, we realized efficient, high-power, high-repetition-rate pulsed laser operation. Depending on the output coupling utilized, single- or dual-wavelength laser action could be achieved. A maximum output power of 5.02 W at 1014.5 nm was produced at a pulse repetition rate of 1.67 MHz, with an optical-to-optical efficiency of 41% and a slope efficiency of 54%; while operating at 1004.9/1012.7 nm, the pulsed laser could produce an output power of 3.94 W at 1.38 MHz, with a pulse duration being as short as 34 ns. The largest pulse energy and highest peak power achieved were 3.0 μJ and 85.3 W. The results demonstrated in our experiment reveal the great potential of the few-layer Bi2Te3 topological insulator in the development of pulsed compact solid-state lasers in the 1-μm region.

High-power Passive Q-switching Performance of a Yb:YCa4O(BO3)3 Laser with a Few-Layer Bi2Te3 Topological Insulator As a Saturable Absorber

Passive Q-switching of an Yb:GdCa4O(BO3)(3) Laser Induced by a Few-Layer Bi2Te3 Topological Insulator Saturable Absorber

High-power Yb:YCa4O(BO3)(3) Laser Passively Q-switched by a Few-Layer WS2 Saturable Absorber

Few-layer Bi2Te3: an Effective 2D Saturable Absorber for Passive Q-switching of Compact Solid-State Lasers in the 1-Μm Region.

Passively Q-switched Laser Action of Yb:LaCa4O(BO3)3 Crystal at 1.07–1.08 Μm Induced by 2D Bi2Te3 Topological Insulator

Performance of an Yb:LaCa4O(BO3)3 Crystal Laser at 1.03–1.04 Μm Passively Q-switched with 2D MoTe2 Saturable Absorber

Passively-Q-Switched 1.33 Μm Nd:Luysgg Laser with the Bi2Se3 Topological Insulator As a Saturable Absorber

Sb2Te3 Topological Insulator for 52 Nm Wideband Tunable Yb-doped Passively Q-switched Fiber Laser

Passively Q-switched Laser Action of Yb:LaCa4O(BO3)3 Crystal

Passive Q-switching of an Yb:KLu(WO4)2 Laser with 2D Saturable Absorbers of MoS

Passive Q-switching Induced by Few-Layer MoTe2 in an Yb:YCOB Microchip Laser.

106Μm Q-switched Ytterbium-Doped Fiber Laser Using Few-Layer Topological Insulator Bi_2Se_3 As a Saturable Absorber

Passively Q-switched Yb:KLu(WO4)(2) Laser with 2D MoTe2 Acting As Saturable Absorber

Passively Q-Switched Yb:YAG Laser with Cr(4+):YAG As the Saturable Absorber.

Passively-Q-switched Yb:YAG laser with Cr:YAG as a saturable absorber

Passive Q-Switching of Pr:Liyf4 Orange Laser at 604 Nm Using Topological Insulators Bi2se3 As Saturable Absorber

1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi2Se3 as a saturable absorber

Passively Q-switched Yb : YAG laser with Cr 4 1 : YAG s the saturable absorber

Bi2se3 As A Saturable Absorber for Ultrafast Photonic Applications of Yb-Doped Fiber Lasers

High-Power Cr2+:Zns Saturable Absorber Passively Q-Switched Ho:Yag Ceramic Laser and Its Application to Pumping of A Mid-Ir Opo

Passively Q-switched Tm:YAP laser with a zeolitic imidalate framework-67 saturable absorber operating at 3H4→3H5 transition