Thin-film Lithium Niobate Photonic Integrated Devices: Progresses and Opportunities
Xiao Xiong,Qi-Tao Cao,Yun-Feng Xiao
DOI: https://doi.org/10.7498/aps.72.20231295
IF: 0.906
2023-01-01
Acta Physica Sinica
Abstract:Lithium niobate, known as one of the most widely used nonlinear optical crystals, has recently gained significant attention from both academia and industry. The surge in interest can be attributed to the commercial availability of thin-film lithium niobate (TFLN) wafers and the rapid advancements in nanofabrication techniques. A milestone was achieved in 2020 with the successful fabrication of wafer-scale TFLN photonic integrated circuits, which paved the way for mass-producible and cost-effective manufacturing of TFLN-based products.At present, the majority of research on TFLN photonic integrated devices focuses on light manipulation, i.e., field modulation and frequency conversion. The electro-optic, acousto-optic, photo-elastic and piezo-electric effects of lithium niobate are harnessed to modulate the amplitude, phase and frequency of light. The second-order and third-order nonlinearities of lithium niobate enable frequency conversion processes, leading to the development of frequency converters, optical frequency combs, and supercontinuum generation devices. These exceptional optical properties of lithium niobate enable the electromagnetic wave manipulation covering from radio-frequency to terahertz, infrared, and visible bands. Leveraging the outstanding performance of TFLN photonic integrated devices, including remarkable modulation rate, wide operation bandwidth, efficient nonlinear frequency conversion, and low power consumption, a diverse range of applications has been demonstrated, spanning optical information processing, laser ranging, optical frequency combs, microwave optics, precision measurement, quantum optics, and quantum computing.Additionally, notable advancements have been reported for TFLN-based lasers and amplifiers, with both optical and electrical pumps available. These achievements involve the incorporation of gain materials such as rare-earth ions, or heterostructures with III-V semiconductors. The integration of low-dimensional materials or absorptive metals with TFLN has also enabled the realization of TFLN-based detectors. These significant developments have expanded the potential applications of TFLN photonic integrated devices, paving the way for monolithic TFLN chips.The versatility and high-performance characteristics of TFLN photonic integrated devices have enabled transformative advancements in these fields, opening up new possibilities for cutting-edge technologies and their practical implementations. In this Perspective, we provide a brief introduction to the development of nanofabrication techniques for TFLN. Subsequently, we review the latest progresses in TFLN photonic integrated devices, encompassing lasers, functional nonlinear optical devices, and detectors. Finally, we discuss the future directions and potential avenues for TFLN photonics.