Broadband Thin-Film Lithium Niobate Electro-Optic Modulator

Jinming Tao,Yinuo Yang,Xintong Li,Peng Wang,Jinye Li,Jianguo Liu
DOI: https://doi.org/10.3390/photonics11040325
IF: 2.536
2024-03-31
Photonics
Abstract:Recently, thin-film lithium niobate electro-optical modulators have developed rapidly and have become the core solution for the next generation of electro-optical problems. Compared with bulk lithium niobate modulators, these modulators not only retain the advantages of lithium niobate materials, such as low loss, high extinction ratio, high linear response and high optical power handling capabilities, but can also effectively improve some performance parameters, such as the voltage bandwidth performance of the modulator. Unfortunately, the extremely small electrode gap of thin-film lithium niobate EO (electro-optic) modulators causes metal absorption, resulting in higher microwave losses. The electro-optical performance of the modulator, thus, deteriorates at high frequencies. We designed traveling-wave electrodes with microstructures to overcome this limitation and achieve a 3 dB electro-optical bandwidth of 51.2 GHz. At the same time, we maintain low on-chip losses of <2 dB and a high extinction ratio of 15 dB. It is important to note that the devices we manufactured were metal-encapsulated and passed a series of reliability tests. The success of this modulator module marks a key step in the commercialization and application of thin-film lithium niobate modulation devices.
optics
What problem does this paper attempt to address?
### Problems Addressed by the Paper The paper primarily aims to address the performance issues of thin-film lithium niobate electro-optic modulators in high-frequency applications. Specifically, while thin-film lithium niobate electro-optic modulators possess the advantages of traditional lithium niobate materials (such as low loss, high extinction ratio, high linear response, and high optical power handling capability), their extremely small electrode gaps lead to metal absorption effects, thereby increasing microwave loss and degrading electro-optic performance at high frequencies. To overcome this limitation, the research team designed a traveling-wave electrode with microstructures to achieve higher bandwidth performance. The specific results are as follows: - **3 dB Electro-optic Bandwidth**: Achieved 51.2 GHz. - **On-chip Loss**: Maintained at <2 dB. - **Extinction Ratio**: Up to 15 dB. Additionally, the manufactured devices underwent a series of reliability tests and adopted metal packaging technology, marking a critical step towards the commercialization and practical application of thin-film lithium niobate modulator devices.