Thin-Film Lithium Niobate Modulators with Ultra-High Modulation Efficiency
Xiangyu Meng,Can Yuan,Xingran Cheng,Shuai Yuan,Chenglin Shang,An Pan,Zhicheng Qu,Xuanhao Wang,Jun Wang,Peijie Zhang,Chengcheng Gui,Jiang Tang,Chao Chen,Cheng Zeng,Jinsong Xia
DOI: https://doi.org/10.1002/lpor.202400809
2024-01-01
LASER & PHOTONICS REVIEWS
Abstract:Thin-film lithium niobate (TFLN)-based electro-optic modulators have extensive applications in broadband optical communications due to their broad bandwidth, high extinction ratio, and low optical loss. However, compared with their silicon and indium-phosphide (InP)-based counterparts, TFLN exhibits lower modulation efficiency. Simultaneously achieving low driving voltage and a wide modulating bandwidth poses a significant challenge. To address this limitation, this paper proposes a transparent conductive oxide film into the device, resulting in an ultra-high modulation efficiency of 1.02 V cm. The fabricated composite electrode not only attains high modulation efficiency but also sustains a high electro-optic bandwidth, as evidenced by the 3 dB roll-off at 108 GHz and the transmission of PAM-4 signals at 224 Gbit s-1. The fabricated device offers novel solutions for low-cost, high-performance modulators, thereby facilitating the downsizing of TFLN-based multichannel optical transmitter chips. A Thin-film lithium niobate (TFLN) electro-optic modulator with transparent conductive oxide (TCO) film is proposed, resulting in an ultra-high modulation efficiency of 1.02 V cm. The fabricated modulator with the composite electrode sustains a high 3dB roll-off electro-optic bandwidth of 108 GHz, facilitating the downsizing of TFLN-based multichannel optical transmitter chips. image