Abstract:High‐quality c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) semiconductor can be achieved by annealing of a‐IGTO in O2 furnace at 700 °C. The O vacancy‐rich CAAC‐IGTO semiconductor has ferroelectric‐like properties. As a result, synaptic CAAC‐IGTO TFT can mimic the electrical characteristics of biological synapses using a conventional SiO2 gate insulator. Therefore, the CAAC‐IGTO TFTs can be applied to highly integrated neuromorphic electronics. Artificial synapses are a key component of neuromorphic computing systems. To achieve high‐performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈1015). In this work, a coplanar synaptic, thin‐film transistor (TFT) made of c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired‐pulse depression (PPD), short‐term plasticity (STP), and long‐term plasticity at VDS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (Vo+/Vo++) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous works use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.

Analysis on charge-retention characteristics of sub-threshold synaptic IGZO thin-film transistors with defective gate oxides

Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing

Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors

IGZO-based floating-gate synaptic transistors for neuromorphic computing

Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

Effect of interface defects on electrical characteristics of a-ITGZO TFTs under bottom, top, and dual gatings

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits

Analysis of Channel-Length Dependence of Residual Hydrogen Diffusion From the Gate Insulator During Oxygen Annealing Treatment in IGZO TFTs