Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Ultrawide-bandgap semiconductor AlN crystals: growth and applications

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

Research Progress of AlGaN Ultraviolet Light-Emitting Diodes

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors

The Controlled Growth of Long AlN Nanorods and In-situ Investigation on Their Field Emission Properties

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

GaN, AlN, and InN: A review

Experimental Evidence Of Large Bandgap Energy In Atomically Thin Aln

Extended vapor?liquid?solid growth and field emission properties of aluminium nitride nanowires

Al-Rich Algan Semiconductor Materials And Their Device Applications

Progress in efficient doping of Al-rich AlGaN