Electrical Properties Analysis of Dielectric Thin Films 0.2BaTiO 3 – 0.8BaZr 0.5 Ti 0.5 O 3 on Fluorine Doped Tin Oxide Substrate

Zuhdi,
DOI: https://doi.org/10.1590/1980-5373-mr-2023-0350
2024-02-03
Materials Research
Abstract:Dewi, Rahmi ; Nursyafni, ; Daulay, Siti Rahma ; Hadilala, Teguh P. ; Sitorus, Sri Ningsih ; Nasir, Zulfa ; Rini, Ari Sulistyo ; Hamzah, Yanuar ; Zuhdi, ; Ferroelectric thin films of 0.2BaTiO3 – 0.8BaZr0.5Ti0.5O3 (BT-BZT) are dielectric materials applied in various sensors, particularly in capacitor manufacturing, due to their excellent electrical properties. This ferroelectric material also has a high dielectric constant value, such that it is suitable for use in Ferroelectric Random Access Memory (FeRAM) and microwaves. Therefore, this study aimed to synthesize thin BT-BZT films with annealing temperature variations of 700 °C, 750 °C, and 800 °C. To achieve this, the sol-gel method was applied to Fluorine Doped Tin Oxide (FTO) substrate, a selected technique for its simplicity and cost-effectiveness. The electrochemical properties were characterized using electrochemical impedance spectroscopy (EIS). The research results show that at a frequency of 100 Hz, the highest dielectric constant obtained was 58975.43 at a temperature of 800 °C. This temperature has the highest resistance compared to other samples. The highest capacitance value is 2.9 μF at a temperature of 700 oC. Therefore, it was concluded that the annealing temperature influenced the dielectric constant and the capacitance values of the capacitor.
materials science, multidisciplinary
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