Abstract:As integrated circuit (IC) technology continues to advance, the challenge to extend Moore's law without sacrificing power density and energy efficiency is critical. One method of achieving these goals is through the utilization of Chemical Mechanical Planarization (CMP) to achieve surface planarity down to angstrom level uniformity. Current IC architecture relies on the integration of Cu wiring into Si (i.e., TEOS) substrates to provide effective power transfer. However, this traditional design is limited in efficiency for smaller, high-powered devices which require increased insulating properties. To combat these limitations, low resistivity metals (i.e., Ta, TaN, Mo, etc.) are incorporated for their inherent resistance to electromigration. More specifically, Mo has become increasing attractive due to the metal's thermal stability and compatibility with Cu to serve as an efficient diffusive barrier. These ideal characteristics ultimately lead to the challenge of increased hardness resulting from inherent inert properties leading to the inhibition of effective CMP processes. To overcome this challenge, Mo-CMP involves the use of harsh polishing conditions consisting of high pressure-velocity coupled with complex slurry dispersions containing aggressive redox chemistry (i.e., KMnO 4 ,KIO 3 ,APS, etc.) and high abrasive nanoparticle content (i.e., Al 2 O 3 , SiO 2 , etc.). More specifically, the utilization of harsh oxidizers and alkaline conditions results in a metal oxide film ideal for effective material removal rate (MRR). However, it is with the implementation of these conditions that ultimately results in the generation of surface defects (i.e. scratching, pitting, etching, organic residues, galvanic corrosion, etc.) which are detrimental to the performance (i.e., power efficiency, operating frequency, etc.) for next generation IC devices. This work will focus on the investigation into conditions leading to effective MRR in Mo-CMP. More specifically, this work will utilize a suite of dynamic analytical techniques (i.e. atomic force microscopy, scanning electron microscopy, quartz crystal microbalance, contact angle, electrochemical analysis, etc.) to evaluate interfacial reaction mechanisms that lead to the productive modification for the reduction of shear force during polishing. It has been shown that the incorporation of tailored chemistries and the addition of "softer" passivating agents (i.e., polyamines) can result in the formation of surface-active complexes that trigger rapid interfacial redox reactions in H 2 O 2 environments at a more amenable pH. Increasing the chemistry's surface activity to Mo will result in a decreased Ea limiting the effects of nanoparticle adsorption to reduce CMP induced defectivity without the expense of corrosion events necessary for MRR. Furthermore, the implementation of "softer" passivating agents can reduce the galvanic corrosion effects with Cu which significantly reduce secondary defectivity.

Study on synergetic effect of potassium pyrophosphate and benzotriazole on chemical mechanical planarization of GLSI low-technology node molybdenum barrier layer

The Cmp Effect Of Potassium Molybdate With Bta As Compound Corrosion Inhibitor Used In Cmp Of The Tsv Heterogeneous Microstructure

Effect of Corrosion Inhibitor and Non-ionic Surfactant on CMP of Cu/Co Barrier Stack

The Role of Dipotassium Ethylenediaminetetraacetic Acid and Potassium Oleate on Chemical Mechanical Planarization Relevant to Heterogeneous Materials of Cobalt Interconnects

Ruthenium and Copper CMP in periodate-based slurry with BTA and K2MoO4 as compound corrosion inhibitors

Effect of 2-phosphonobutane-1,2,4-tricarboxylic acid (PBTCA) on Cu/Ta chemical mechanical planarization (CMP) in the barrier layer: A novel complexing agent and the dual role on Cu

Development of Slurry Formulations for Molybdenum-Chemical Mechanical Planarization (Mo-CMP)

Synergetic effect of benzotriazole and non-ionic surfactant on copper chemical mechanical polishing in KIO 4 -based slurries

Synergistic Action Mechanism and Effect of Ammonium Dodecyl Sulfate and 1,2,4-Triazole in Alkaline Slurry on Step Height Reduction for Cu CMP

Study on Effective Methods and Mechanism of Inhibiting Cobalt Removal Rate in Chemical Mechanical Polishing of GLSI Low-Tech Node Copper Film

Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers

Chemical Interactions and Mechanisms of Different Ph Regulators on Copper and Cobalt Removal Rate of Copper Film CMP for GLSI

Integrated electrochemical analysis of polyvinyl pyrrolidone (PVP) as the inhibitor for copper chemical mechanical planarization (Cu-CMP)

Chemical Mechanical Polishing of Molybdenum in Potassium Iodate-Based Acidic Slurries

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Corrosion Inhibiting Effect on Copper Chemical Mechanical Planarization (cmp) in Fe(No3)(3) Based Slurries

Selection and Optimization of Corrosion Inhibitors for Improved Cu CMP and Post-Cu CMP Cleaning