Abstract:To expand industrial applications of 2D‐TMD‐based photodetectors, a link between oxidation behavior of large‐scale MoS2 layers and their photoelectrical properties via combinatorial spectro‐microscopic analyses is profoundly capture. Due to the several oxidation effects of 2D MoS2 based photodetector, photoelectrical properties are gradually enhanced and rapidly degraded with altered temperature and duration of annealing process. Despite the encouraging properties and research of 2D MoS2, an ongoing issue associated with the oxidative instability remains elusive for practical optoelectronic applications. Thus, in‐depth understanding of the oxidation behavior of large‐scale and homogeneous 2D MoS2 is imperative. Here the structural and chemical transformations of large‐area MoS2 multilayers by air‐annealing with altered temperature and time via combinatorial spectro‐microscopic analyses (Raman spectroscopy, X‐ray photoelectron spectroscopy, and atomic force microscopy) are surveyed. The results gave indications pertaining to temperature‐ and time‐dependent oxidation effects: i) heat‐driven elimination of redundant residues, ii) internal strain stimulated by the formation of MoO bonds, iii) deterioration of the MoS2 crystallinity, iv) layer thinning, and v) morphological transformation from 2D MoS2 layers to particles. Photoelectrical characterization of the air‐annealed MoS2 is implemented to capture the link between the oxidation behavior of MoS2 multilayers and their photoelectrical properties. The photocurrent based on MoS2 air‐annealed at 200 °C is assessed to be 4.92 μA, which is 1.73 times higher than that of pristine MoS2 (2.84 μA). The diminution in the photocurrent of the photodetector based on MoS2 air‐annealed above 300 °C in terms of the structural, chemical, and electrical conversions induced by the oxidation process is further discussed.

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