Abstract:Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical spin--momentum locking of the surface states arises from intrinsic spin--orbit coupling (SOC) and provides topological protection to the surface states against scattering from external perturbations, like defects and non-magnetic impurities. Breaking the topological protection of surface states of topological insulators is an essential prerequisite for exploring their applications. Rare-earth ions typically exhibit larger magnetic moments than transition-metal ions and thus promise the opening of a wider exchange gap in the Dirac surface states of topological insulators. Bi$_2$Se$_3$ is an interesting material; on the one hand, it has semiconducting properties when it is thin sheets; on the other hand, it's a topological insulator when the structure has a minimum of six quintuple layers (QLs), with diverse applications in photothermal, thermoelectric, and optical properties. Here, we have developed a controlled colloidal synthesis with low temperature and a cost-effective process for the synthesis of undoped and Eu-doped 2D layered Bi$_2$Se$_3$ nanosheets. Scanning tunneling spectroscopy measurements demonstrated a correlation between the shift of Dirac point position and the dopant content, which has been theoretically established by the band structure calculation. At low temperatures below 10K, for the 10\% Eu-doped sample, magnetic data suggests an antiferromagnetic ordering in the sample, which may be the contribution of the mixed valence state of Europium. Our results support that antiferromagnetic exchange interaction can exist in topological surface states in rare-earth Eu-doped Bi$_2$Se$_3$, which can open a new window to novel quantum phenomena.

Surface Doping and Dual Nature of the Band Gap in Excitonic Insulator Ta 2 NiSe 5

Strong interband interaction in the excitonic insulator phase of Ta$_2$NiSe$_5$

Surface doping manipulation of the insulating ground states in Ta 2 Pd 3 Te 5 and Ta 2 Ni 3 Te 5

Disentangling the electron-lattice dichotomy of the excitonic insulating phase in Ta2Ni(Se1−xSx)5 with sulfur substitution and potassium deposition

Electronic band structure in pristine and Sulfur-doped Ta$_2$NiSe$_5$

Anomalous excitonic phase diagram in band-gap-tuned Ta2Ni(Se,S)5

Temperature-dependent evolutions of excitonic superfluid plasma frequency in a srong excitonic insulator candidate, Ta$_2$NiSe$_5$

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Disentangling lattice and electronic instabilities in the excitonic insulator candidate Ta$_2$NiSe$_5$ by nonequilibrium spectroscopy

Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological InsulatorBi2Se3Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy

Electronic Structures of Layered Ta2NiS5 Single Crystals Revealed by High-Resolution Angle-Resolved Photoemission Spectroscopy

Ultrafast Electronic Band Gap Control in an Excitonic Insulator

Exploring control of the emergent exciton insulator state in 1T-TiSe$_2$ monolayer by state-of-the-art theory models

Evolution of the electronic structure in Ta$_2$NiSe$_5$ across the structural transition revealed by resonant inelastic x-ray scattering

Finite-temperature photoemission in the extended Falicov-Kimball model: a case study for Ta$_2$NiSe$_5$

Band hybridisation at the semimetal-semiconductor transition of Ta$_2$NiSe$_5$ enabled by mirror-symmetry breaking

Nature of symmetry breaking at the excitonic insulator transition: Ta$_2$NiSe$_5$

Detecting photoelectrons from spontaneously formed excitons

Incoherence-to-coherence Crossover Observed in Charge-Density-wave Material 1T-Tise2

Surface Charge Induced Dirac Band Splitting in a Charge Density Wave Material (Tase4)2i

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping