Electronic Structures of Layered Ta2NiS5 Single Crystals Revealed by High-Resolution Angle-Resolved Photoemission Spectroscopy

Kejun Mu,Haiping Chen,Yuliang Li,Yingying Zhang,Pengdong Wang,Bo Zhang,Yi Liu,GuoBin Zhang,Li Song,Zhe Sun
DOI: https://doi.org/10.1039/c8tc00149a
IF: 6.4
2018-01-01
Journal of Materials Chemistry C
Abstract:Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structures of quasi-one-dimensional (1D) ternary material Ta2NiS5 single crystals. Contrary to its sister compound Ta2NiSe5, which is a candidate material for excitonic insulators, we found that Ta2NiS5 cannot realize the ground state of an excitonic insulator according to temperature-dependent valence band dispersions along the Gamma-X direction. In particular, the experimental ARPES data reveal that the electronic structures show strong two-dimensional characteristics along with a considerable in-plane anisotropy indicating evident coupling among the one-dimensional chain structures. Moreover, theoretical band calculations have to be compressed by a factor of about 15% in energy in order to match the experimental band structures, implying that some weak electron correlations are neglected in the band calculations.
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