A High Quality Factor, 19-GHz Periodically Poled AlScN BAW Resonator Fabricated in a Commercial XBAW Process
Izhar,Merrilyn M. A. Fiagbenu,Xingyu Du,Pariasadat Musavigharavi,Yang Deng,Akhil Gunda,Jeff Leathersich,Craig Moe,Abhay Kochhar,Eric A. Stach,Ramakrishna Vetury,Roy H. Olsson
DOI: https://doi.org/10.1109/ted.2024.3435175
IF: 3.1
2024-08-28
IEEE Transactions on Electron Devices
Abstract:This article presents 19-GHz bulk acoustic wave (BAW) resonators realized in a periodically poled piezoelectric film (P3F) microfabricated in a commercial XBAW process. The polarization of the three layers comprising the P3F film are realized via a combination of as-grown (two-layer) and electrically poled (one-layer) aluminum scandium nitride (AlScN). To improve the series ( ) and maximum ( ) quality factors, the device is constructed by connecting two-BAW resonators in series, which lowers the effect of the via resistance when compared with a traditional single BAW. Resonators achieved of 531 (with of 348 and of 264) and (defined as , where is the quality factor at series ( ) or parallel ( ) resonance frequency) of 6542 at 18.8-GHz frequency, which is higher than most of the state-of-the-art piezoelectric BAW resonators operating at similar and higher frequencies. The experimental results indicate that the P3F BAW resonators are promising for applications in emerging RF communication systems.
engineering, electrical & electronic,physics, applied