Enhanced Photodetection through a Perovskite BaTiO3 Dielectric in Si−MoS2 Heterojunction

Praloy mondal
DOI: https://doi.org/10.1039/d4cp02155j
IF: 3.3
2024-06-25
Physical Chemistry Chemical Physics
Abstract:The present investigation deals with the effect of BaTiO3 (BTO) dielectric layer on the performance of MoS2/p-Si heterojunction photodetectors. MoS2/p-Si Junction demonstrate the responsivity ~ 80 A/W and detectivity ~1012 Jones. The inclusion of a dielectric BTO layer significantly enhances the performance of MoS2/p-Si photodetectors, leading to a remarkable improvement in very high responsivity~603 A/W and detectivity~1013 Jones. The I-V characteristics of MoS2/p-Si and MoS2/BTO/p-Si junctions under illumination can be understood by considering their respective energy band diagrams. This addition alters the energy band alignment, leading to higher conduction band offset and valence band offset values. The large photocurrent in forward bias in MoS2/BTO/p-Si junction may be attributed to the presence of photogenerated electrons in depletion region of BTO. BTO exhibits characteristics such as a long carrier diffusion length and low recombination rates, contributing to a reduction in carrier recombination within the photodetector for which the photocurrent of MoS2/BTO/p-Si heterojunction can be improved significantly. The enhanced performance of the MoS2/BTO/p-Si junction, characterized by higher responsivity and detectivity, underscores the potential of this heterojunction for advanced photodetection applications, suggests promising avenues for further research and development in the field of photodetectors.
chemistry, physical,physics, atomic, molecular & chemical
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