Abstract:Carrier mobility and density are intrinsically important in nanophoto/electronic devices. High-dielectric-constant coupled polarization-field gate ferroelectrics are frequently studied and partially capable in achieving large-scale tuning of photoresponse, but their light absorption and carrier density seem generally ineffective. This raises questions about whether a similarly high-dielectric-constant paraelectric gate dielectric could enable tuning and how the principles involved could be established. In this study, by deliberately introducing lattice defects in high-dielectric-constant paraelectric, cubic BaTiO3 (c-BTO) was explored to fabricate MoS2 photodetectors with ultrahigh detection ability and outstanding field-effect traits. An organic-metal-based spin-coating cum annealing method was used for the c-BTO synthesis, with an optimized thickness (300 nm), by introducing lattice defects properly but maintaining a large dielectric constant (55 at 1k Hz) and low dielectric loss (0.06 at 1k Hz), which renders the enhanced visible-light region absorption. As a result of the synergistically enhanced mobility and photoabsorption, the MoS2/BTO FET exhibits promising merits, for example, on/off ratio, subthreshold swing, and mobilities for high-performance photodetectors with excellent responsivity (600 AW–1) and detectivity (1.25 × 1012 Jones). Thus, this work facilitates the establishment of a lattice defect induced sub-bandgap absorption landmap for synergistically enhanced photoresponse for high-performance photodetector exploration.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03402?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03402</a>.GIXRD patterns and dielectric properties of different BaTiO3 films illustrating that preparation conditions were optimized to control purity, phase, and dielectricity; optical microscope images, Raman and PL spectra of MoS2via macromechanical exfoliation; SEM cross-sectional image and the dielectric property of BTO film of 100 nm; optical image of the MoS2/BTO (100 nm) device with transferred film electrodes and Raman spectrum of the MoS2; transfer and output curves FET based on 100 nm BTO; field-effect mobilities for BTO thicknesses of 300 and 100 nm; IDS – VDS curves of photodetector with 100 nm BTO (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03402/suppl_file/nn1c03402_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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