Abstract:2D materials with tailored morphologies exhibit distinctive shape-dependent properties especially in electrocatalysis and gas sensing, extending their applications in nanoelectronics. Atomic-layer tungsten disulfide (WS2) stands out as a promising candidate, but the controllable synthesis of WS2 still faces unavoidable obstacles, such as strict parameter requirements, low efficiency and serious pollution during the preparation. Here we report an elegant technique for growing homogeneous-luminescence WS2 monolayer with desired shapes and developed electrochemical properties, through the improved chemical vapor deposition method with a semi-closed airflow environment. It is an effective, economic and especially environment-friendly approach with atmospheric pressure and hydrogen-free condition, aiming at synthesizing high-quality and large-scale monolayer WS2 crystals with only one heating zone. Compared with the existing methods, this one significantly minimizes the sulphur contamination to the environment and equipment, enabling the reuse of quartz tube and reducing the cost. More importantly, different shapes of WS2 domains with high crystalline and excellent homogeneity of luminescent intensity are controllable by adjusting the growth temperatures. In addition to the good electrical transport performance of WS2 monolayer, the WS2 domains with different morphologies exhibit modulated properties for catalyzing the electrochemical hydrogen evolution. This systematic study on shape-controlled growth and shape-dependent electrochemical performances of WS2 will further push forward their practical applications.

Hydrogen Addition for Centimeter-Sized Monolayer Tungsten Disulfide Continuous Films by Ambient Pressure Chemical Vapor Deposition

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

Facile Access to Shape-Controlled Growth of WS2 Monolayer Via Environment-Friendly Method

ZnO-Controlled Growth of Monolayer WS2 Through Chemical Vapor Deposition

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Insight into the Role of H 2 in WS 2 Growth by Chemical Vapor Deposition

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

CVD Controlled Growth of Large-Scale WS2 Monolayers

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Chemical Vapor Deposition of Monolayer WS2 Nanosheets on Au Foils Toward Direct Application in Hydrogen Evolution

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Large-area synthesis of high-quality and uniform monolayer WS 2 on reusable Au foils

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.