Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Spectrum of Tunneling Transport through Phonon-Coupled Defect States in a Carbon-Doped Hexagonal Boron Nitride Barrier

Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Tunneling properties of vertical heterostructures of multilayer hexagonal boron nitride and graphene

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Dielectric environment sensitivity of carbon centres in hexagonal boron nitride

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Tunneling Spectroscopy in Carbon Nanotube-Hexagonal Boron Nitride-Carbon Nanotube Heterojunctions

Exciton-assisted electron tunneling in van der Waals heterostructures

Coupling of excitons and defect states in boron-nitride nanostructures

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers