Abstract:Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their mid-gap electronic structure and orbital/spin wave-function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic mid-gap states to the well-established photoluminescence response (including single photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: 1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM, and 2) multi-site defect complexes exhibiting a ladder of empty and occupied mid-gap states characterized by distinct spatial geometries. Combining direct probing of mid-gap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.

Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities

Electronic Structures of Defective Boron Nitride Nanotubes under Transverse Electric Fields

Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride

Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Spin-Resolved Visible Optical Spectra and Electronic Characteristics of Defect-Mediated Hexagonal Boron Nitride Monolayer

Engineering Boron Vacancy Defects in Boron Nitride Nanotubes

Spectrum of Tunneling Transport through Phonon-Coupled Defect States in a Carbon-Doped Hexagonal Boron Nitride Barrier

Electronic structures of defective BN nanotubes under transverse electric fields

Identification of defects responsible for optically detected magnetic resonance in hexagonal boron nitride

Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

First-principles Engineering of Charged Defects for Two-dimensional Quantum Technologies

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences

Temperature-Dependent Energy-Level Shifts of Spin Defects in Hexagonal Boron Nitride

Wide-field spectral super-resolution mapping of optically active defects in hBN

Optically-active spin defects in few-layer thick hexagonal boron nitride