Abstract:Molybdenum is envisioned for next‐gen interconnects, but it is a tough material. This paper discusses issues with conventional annealing applied to patterned Mo nanowires, their grain structure is tracked using high‐resolution TEM with in‐situ heating. Alternative fast cyclic annealing scheme is presented that achieves the bamboo grain structure without bottlenecks in only a few seconds. Recent surge in demand for computational power combined with strict constraints on energy consumption requires persistent increase in the density of transistors and memory cells in integrated circuits. Metal interconnects in their current form struggle to follow the size downscaling due to materials limitations at the nanoscale, causing severe performance losses. Next‐generation interconnects need new materials, and molybdenum (Mo) is considered the best choice, offering low resistivity, good scalability, and barrierless integration at a low cost. However, it requires annealing at temperatures far exceeding the currently accepted limit. In this work, the challenges of high‐temperature annealing of patterned Mo nanowires are looked into, and a new approach is presented to overcome them. It is demonstrated that while a conventional annealing process improves the average grain size, it can also reduce the cross‐section area, thus increasing the resistivity. Using high‐resolution transmission electron microscopy (TEM) with in situ heating, the evolution of structural features in real time is directly observed. Using insights from these experiments, a cyclic pulsed annealing method is developed, and it is shown that the desired grain structure is achieved in only a few seconds, without forming the surface grooves. These findings can radically facilitate Mo integration, boosting the efficiency of future integrated circuits.

Controlled and Uniform Wet Etching of Molybdenum Nanowires

Controlled Stepwise Wet Etching of Polycrystalline Mo Nanowires

Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions

Digital Etching of Molybdenum Interconnects Using Plasma Oxidation

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Exploration of New Self-limiting Atomic Layer Etching Methods for Molybdenum

Controlling Crystal Structure and Oxidation State in Molybdenum Nitrides Through Epitaxial Stabilization

Inductively Coupled Plasma Etching Of Bulk Molybdenum

Solving the Annealing of Mo Interconnects for Next‐Gen Integrated Circuits

In situ manipulation of E-beam irradiation-induced nanopore formation on molybdenum oxide nanowires

Non-invasive digital etching of van der Waals semiconductors

Roughness induced wettability amplification of novel copper molybdate-branched CuO nanorod arrays by non-aqueous solution method

Controlling the work function of molybdenum disulfide by in situ metal deposition.

Electrochemistry of Molybdenum Single Crystals and Thin Wires in Cyanide and Gold Cyanide Electrolytes

Highly Conductive Vertically Aligned Molybdenum Nanowalls and Their Field Emission Property

Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment

Local Strain‐Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide

Carbon nanotube hybrids with MoS 2 and WS 2 synthesized with control of crystal structure and morphology

Controllable preparation of monolayer MoO3/MoO by using plasma oxidation and atomic layer etching

Advanced morphological control over Cu nanowires through a design of experiments approach