Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Controlling the work function of molybdenum disulfide by in situ metal deposition.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

High-metallic-phase-concentration Mo1–xWxS2 nanosheets with expanded interlayers as efficient electrocatalysts

Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors

Changes of Phonon Modes and Electron Transfer Induced by Interface Interactions of Pd/MoS2 Heterostructures

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Friction and Wear Behaviors of Molybdenum Disulfide Nanosheets under Normal Electric Field

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

A modified CVD method for the synthesis of monolayer MoS2 and photoelectric improvement by HfO2 passivation

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Engineering the Interface of Cu/MoS 2 Nanostructures for Improved Charge Transfer for Applications as PEC Anode Materials